RT3A77M

PRELIMINARY PRELIMINARYNotice：This is not a final specification Some parametric are subject to change. DESCRIPTION RT3A77M is compound transistor built with two 2SA2166 chips in SC-88 package. FEATURE ●High collector current ●Low collector to emitter saturation voltage ●Each transistor elements are independent ●Mini package for easy mounting 2.0 0.65 0.65 RT3A77M Composite Transistor For General Purpose High Current Drive Application Silicon PNP Epitaxial Type OUTLINE DRAWING 2.1 1.25 ① ② ③ ⑥ ⑤ ④ Unit：mm 0.13 0.24 APPLICATION For switching application, small type motor drive application 0.9 0.7 0～0.1 TERMINAL CONNECTOR ①：EMITTER1 Tr1 ②：BASE1 ③：COLLECTOR2 Tr2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) (Tr1, Rr2) SYMBOL VCEO VCBO VEBO IC PT Tj Tstg PARAMETER Collector to Emitter voltage Collector to Base voltage Emitter to Base voltage Collector current Total dissipation Junction temperature Storage temperature RATING -60 -60 -5 -500 200 ＋150 -55～＋150 UNIT V V V mA mW ℃ ℃ MARKING 654 .A７７ １23 Type name ELECTRICAL CHARACTERISTICS (Ta=25℃) (Tr1, Rr2) Symbol Parameter V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Collector to Emitter breakdown voltage Collector to Base breakdown voltage Emitter to Base breakdown voltage Collector cut off current Emitter cut off current DC forward current gain Collector to Emitter saturation voltage Base to Emitter saturation voltage Gain band width product Collector output capacita...