PNP Transistor. RT3AMMAM1 Datasheet

RT3AMMAM1 Transistor. Datasheet pdf. Equivalent

Part RT3AMMAM1
Description Silicon PNP Transistor
Feature PRELIMINARY RT3AMMAM1 Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitax.
Manufacture Isahaya Electronics Corporation
Datasheet
Download RT3AMMAM1 Datasheet

PRELIMINARY RT3AMMAM1 Composite Transistor For Low Frequenc RT3AMMAM1 Datasheet
Recommendation Recommendation Datasheet RT3AMMAM1 Datasheet




RT3AMMAM1
PRELIMINARY
RT3AMMAM1
Composite Transistor
For Low Frequency Amplify Application
Silicon Pnp Epitaxial Type
DESCRIPTION
RT3AMMAM1 is compound transistor built with two
ISA1235A chips in SC-88 package.
FEATURE
Silicon PNP epitaxial type
Each transistor elements are independent.
Mini package for easy mounting.
OUTLINE DRAWING
2.1
1.25
Unitmm
APPLICATION
For low frequency amplify application.
TERMINAL
CONNECTOR
①:EMITTER1
Tr1 ②:BASE1
③:COLLECTOR2
Tr2 ④:EMITTER2
⑤:BASE2
:COLLECTOR1
JEITASC-88
MAXIMUM RATING (Ta=25) (Tr1 , Tr2.)
SYMBOL
VCBO
VEBO
VCEO
IC
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipationTotal,Ta=25℃)
Junction temperature
Storage temperature
RATING
-60
-6
-50
-200
150
150
-55~+150
UNIT
V
V
V
mA
mW
MARKING
654
.AA F
123
ISAHAYA ELECTRONICS CORPORATION



RT3AMMAM1
PRELIMINARY
RT3AMMAM1
Composite Transistor
For Low Frequency Amplify Application
Silicon Pnp Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25) (Tr1, Tr2.)
Symbol
Parameter
V(BR)CEO
ICBO
IEBO
hFE*
hFE
VCE(sat)
fT
Cob
NF
Collector to Emitter break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
Noise figure
* : It shows hFE classification in right table.
Test conditions
IC=100μA,RBE=
VCB =-60V,IE=0
VEB=-6V,IC=0
VCE=-6V,IC=-1mA
VCE=-6V,IC=-0.1mA
IC=-100mA,IB=-10mA
VCE=-6V,IE=10mA
VCB=-6V,IE=0,f=1MHZ
VCE=6V,IE=0.3mA,f=100HZ,RG=10kΩ
Limits
Min Typ
-50 -
--
--
150 -
90 -
--
- 200
- 4.0
--
item
hFE
E
150300
Max
-
-0.1
-0.1
500
-
-0.3
-
-
20
Unit
V
μA
μA
-
-
V
MHZ
pF
dB
F
250500
ISAHAYA ELECTRONICS CORPORATION





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