RT3C99M

RT3C99M Composite Transistor For Muting Application Silicon Npn Epitaxial Type DESCRIPTION RT3C99M is a composite transistor built with two 2SC5938A chips in SC-88 package. FEATURE Silicon NPN epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION muting circuit、switching circuit 2.0 0.65 0.65 OUTLINE DRAWING 2.1 1.25 ① ② ③ ⑥ ⑤ ④ Unit：mm 0.13 0.2 0.9 0.65 0～0.1 TERMINAL CONNECTOR ①：EMITTER1 Tr1 ②：BASE1 ③：COLLECTOR2 Tr2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC PC（Total） Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation（Ta=25℃） Junction temperature Storage temperature RATING 50 40 20 200 150 ＋125 -55～＋125 UNIT V V V mA mW ℃ ℃ MARKING 6 54 .C９９ １23 ISAHAYA ELECTRONICS CORPORATION ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter Test conditions ICBO Collector cut off current IEBO Emitter cut off current hFE* DC forward current gain VCE(sat) Collector to Emitter saturation voltage fT Gain band width product Cob Collector output capacitance Ron Output On-resistance * : It shows hFE classification in right table. VCB =50V,IE=0 VEB=40V,IC=0 VCE=2V,IC=4mA IC=30mA,IB=3mA VCE=6V,IE=-4mA VCB=10V,IE=0,f=1MHZ IB=5mA, f=1MHz RT3C99M Composite Transistor For Muting Application Silicon Npn Epitaxial Type Limits Unit Min Typ Max - - 0.1 μA - - 0.1 μA 200 - 1200 - - 3...