Transistor. RT3T77M Datasheet

RT3T77M Transistor. Datasheet pdf. Equivalent

Part RT3T77M
Description Transistor
Feature PRELIMINARY RT3T77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial .
Manufacture Isahaya Electronics Corporation
Datasheet
Download RT3T77M Datasheet

PRELIMINARY RT3T77M Composite Transistor With Resistor For RT3T77M Datasheet
Recommendation Recommendation Datasheet RT3T77M Datasheet




RT3T77M
PRELIMINARY
RT3T77M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3T77M is compound transistor built with RT1N140
chip and RT1P140 chip in SC-88 package.
OUTLINE DRAWING
Unitmm
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
.
RTr1
R1
RTr2
R1
①②
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
:COLLECTOR1
JEITASC-88
MAXIMUM RATING (Ta=25) (RTr1_NPN, RTr2_PNP)
SYMBOL
PARAMETER
RATING
VCBO
VEBO
VCEO
IC
ICM
PC
Tj
Tstg
Collector to Base voltage
50
Emitter to Base voltage
6
Collector to Emitter voltage
50
Collector current
100
Peak Collector current
200
Collector dissipationTotal, Ta=25℃)
150
Junction temperature
150
Storage temperature
-55~+150
PNP built in transistor of ””sign is abbreviation.
UNIT
V
V
V
mA
mA
mW
MARKING
654
.T7 7
123
ISAHAYA ELECTRONICS CORPORATION



RT3T77M
PRELIMINARY
RT3T77M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25) (RTr1_NPN, RTr2_PNP)
Symbol
Parameter
Test conditions
V(BR)CEO
ICBO
hFE
VCE(sat)
R1
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input resistor
IC=100μA,RBE=
VCB =50V,IE=0
VCE=5V,IC=1mA
IC=10mA,IB=0.5mA
-
fT Gain band width product
VCE=6V,IE=10mA
PNP built in transistor of ””sign is abbreviation.
RTr1
RTr2
Min
50
-
100
-
7.0
-
-
Limits
Typ
-
-
-
0.1
10
200
150
Max
-
0.1
-
0.3
13
-
-
Unit
V
μA
-
V
kΩ
MHZ
TYPICAL CHARACTERISTICS (RTr1_NPN)
10000
DC FORWARD CURRENT GAIN
VS COLLECTOR CURRENT
VCE=5V
INPUT ON VOLTAGE
VS COLLECTR CURRENT
10
VCE=0.2V
1000
100
1
10
0.1
1 10
COLLECTOR CURRENT IC(mA)
100
1000
COLLECTOR CURRENT
VS INPUT OFF VOLTAGE
VCE=5V
0.1
1
10
COLLECTOR CURRENT IC(mA)
100
100
10
0.0
0.5 1.0 1.5
INPUT OFF VOLTAGE VI(off) (V)
2.0
ISAHAYA ELECTRONICS CORPORATION





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