Transistor. RT3T11U Datasheet

RT3T11U Transistor. Datasheet pdf. Equivalent

Part RT3T11U
Description Transistor
Feature RT3T11U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIP.
Manufacture Isahaya Electronics Corporation
Datasheet
Download RT3T11U Datasheet

RT3T11U Composite Transistor With Resistor For Switching App RT3T11U Datasheet
Recommendation Recommendation Datasheet RT3T11U Datasheet




RT3T11U
RT3T11U
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3T11U is a composite transistor built with RT1N141
chip and RT1P141 chip in USM6F package.
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
OUTLINE DRAWING
1.6 ±0.05
1pin マーク
1.2 ±0.05
(0.5)
6
1.6
±0.05
0.5
1. 0
0.5
1
2
3
(0.95)
(0.5)
5
0.1 0.2) 4
Unitmm
0.2 ±0.05
0.5
±0.05
0.12
±0.05
⑥⑤④
RTr1 R1
R2
R2
R1
①②
RTr2
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
:COLLECTOR1
JEITA:-
ISAHAYAUSM6F
MAXIMUM RATING (Ta=25)
SYMBOL
VCBO
VEBO
VCEO
IC
ICM
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipationTotal, Ta=25℃)
Junction temperature
Storage temperature
RATING
50
10
50
100
200
125
150
-55~+150
UNIT
V
V
V
mA
mA
mW
MARKING
654
11
123
ISAHAYA ELECTRONICS CORPORATION



RT3T11U
RT3T11U
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25) (Tr1,Tr2 common)
Symbol
Parameter
Test conditions
V(BR)CEO
ICBO
hFE
VCE(sat)
VI(ON)
VI(OFF)
R1
R2/R1
fT
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
I C=100µARBE=
VCB=50VI E =0mA
VCE=5VI C=10mA
I C=10mAI B=0. 5mA
VCE=0.2VI C=5mA
VCE=5VI C=100µA
Tr1 VCE=6VI E=-10mA
Tr2 VCE=-6VI E=10mA
Min
50
50
0.8
7.0
0.9
Limits
Typ
0.1
1.5
1.1
10
1.0
200
150
TYPICAL CHARACTERISTICS
INPUT ON VOLTAGE
VS. COLLECTOR CURRENT
100
VCE=0.2V
(Tr1)
1000
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
VCE=5V
Max
0.1
0.3
3.0
13
1.1
Unit
V
µA
-
V
V
V
K
-
MHZ
10 100
1
1 10
COLLECTOR CURRENT IC(mA)
1000
COLLECTOR CURRENT
VS. INPUT OFF VOLTAGE
VCE=5V
100
10
1
10
COLLECTOR CURRENT  IC(mA)
100
100
10
0.0
0.4 0.8 1.2 1.6
INPUT OFF VOLTAGE  VI(OFF)(V)
2.0
ISAHAYA ELECTRONICS CORPORATION





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)