RT3T11U

RT3T11U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3T11U is a composite transistor built with RT1N141 chip and RT1P141 chip in USM6F package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit OUTLINE DRAWING 1.6 ±0.05 1pin ﾏｰｸ 1.2 ±0.05 (0.5) 6 1.6 ±0.05 0.5 1. 0 0.5 1 2 3 (0.95) (0.5) 5 (Φ0.1 ～0.2) 4 Unit：mm 0.2 ±0.05 0.5 ±0.05 0.12 ±0.05 ⑥⑤④ RTr1 R1 R2 R2 R1 ①② RTr2 ③ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：－ ISAHAYA：USM6F MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation（Total, Ta=25℃） Junction temperature Storage temperature RATING 50 10 50 100 200 125 ＋150 -55～＋150 UNIT V V V mA mA mW ℃ ℃ MARKING 654 11 １23 ISAHAYA ELECTRONICS CORPORATION RT3T11U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) (Tr1,Tr2 common) Symbol Parameter Test conditions V(BR)CEO ICBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage Input off voltage Input re...