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RT3T1CU Dataheets PDF



Part Number RT3T1CU
Manufacturers Isahaya Electronics Corporation
Logo Isahaya Electronics Corporation
Description Transistor
Datasheet RT3T1CU DatasheetRT3T1CU Datasheet (PDF)

RT3T1CU Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3T1CU is a composite transistor built with RT1N141 chip and RT1P136 chip in USM6F package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit OUTLINE DRAWING 1.6 ±0.05 1pin マーク 1.2 ±0.05 (0.5) 6 1.6 ±0.05 0.5 1. 0 0.5 1 2 3 (0.95) (0.5) 5 (Φ0.1.

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RT3T1CU Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3T1CU is a composite transistor built with RT1N141 chip and RT1P136 chip in USM6F package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit OUTLINE DRAWING 1.6 ±0.05 1pin マーク 1.2 ±0.05 (0.5) 6 1.6 ±0.05 0.5 1. 0 0.5 1 2 3 (0.95) (0.5) 5 (Φ0.1 ~0.2) 4 Unit:mm 0.2 ±0.05 ※PNP built in transistor of ”-”sign is abbreviation. 0.5 ±0.05 0.12 ±0.05 ⑥⑤④ RTr1 R1 R2 R2 R1 ①② RTr2 ③ TERMINAL CONNECTOR ①:EMITTER1 ②:BASE1 ③:COLLECTOR2 ④:EMITTER2 ⑤:BASE2 ⑥:COLLECTOR1 JEITA:- ISAHAYA:USM6F MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Tr1 Tr2 Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Total, Ta=25℃) Junction temperature Storage temperature RATING 50 10 6 50 100 200 125 +150 -55~+150 UNIT V V V V mA mA mW ℃ ℃ MARKING 654 1C 123 ISAHAYA ELECTRONICS CORPORATION RT3T1CU Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol V(BR)CEO ICBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT Parameter Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage Input off voltage Input resistor Resistor ratio Gain band width product Test conditions I C=100µA,RBE=∞ VCB=50V,I E =0mA Tr1 VCE=5V,I C=10mA Tr2 VCE=5V,I C=5mA Tr1 Tr2 I C=10mA,I B=0. 5mA Tr1 Tr2 VCE=0.2V,I C=5mA Tr1 Tr2 VCE=5V,I C=100µA Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 VCE=6V,I E=10mA Min 50 50 33 0.8 0.4 7.0 0.7 0.9 8 Limits Typ Max 0.1 0.1 0.3 0.3 1.5 3.0 0.7 1.2 1.1 0.6 10 13 1.0 1.3 1.0 1.1 10 12 200 150 TYPICAL CHARACTERISTICS (Tr1) INPUT ON VOLTAGE VS. COLLECTOR CURRENT 100 VCE=0.2V 1000 DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT VCE=5V Unit V µA V V V KΩ - MHZ 10 100 DC FORWARD CURRENT GAIN hFE INPUT ON VOLTAGE VI(ON)(V) 1 1 10 COLLECTOR CURRENT IC(mA) 1000 COLLECTOR CURRENT VS. INPUT OFF VOLTAGE VCE=5V 100 10 1 10 COLLECTOR CURRENT  IC(mA) 100 100 COLLECTOR CURRENT IC(mA) 10 0.0 0.4 0.8 1.2 1.6 INPUT OFF VOLTAGE  VI(OFF)(V) 2.0 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY TYPICAL CHARACTERISTICS ( Tr2 ) INPUT ON VOLTAGE VS.COLLECTOR CURRENT -10 VCE=-0.2V -1 RT3T1CU Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type 1000 DC FORWARD CURRENT GAIN VS.COLLECTOR CURRENT VCE=-5V 100 DC FORWARD CURRENT GAIN hFE INPUT ON VOLTEGE VI(ON)(V) -0.1 -1 -10 -100 COLLECTOR CURRENT I C(mA) -1000 COLLECTOR CURRENT VS.INPUT OFF VOLTAGE VCE=-5V 10 -1 -10 -100 COLLECTOR CURRENT IC(mA) -100 COLLECTOR CURRENT IC(μA) -10 0 -0.4 -0.8 -1.2 -1.6 -2 INPUT OFF VOLTAGE VI(OFF)(V) ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when consideri.


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