Document
RT3T1CU
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
DESCRIPTION
RT3T1CU is a composite transistor built with RT1N141 chip and RT1P136 chip in USM6F package.
FEATURE
Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit, interface circuit, driver circuit
OUTLINE DRAWING
1.6 ±0.05
1pin マーク
1.2 ±0.05
(0.5)
6
1.6 ±0.05
0.5 1. 0
0.5
1 2
3
(0.95)
(0.5)
5
(Φ0.1 ~0.2) 4
Unit:mm 0.2 ±0.05
※PNP built in transistor of ”-”sign is abbreviation.
0.5 ±0.05
0.12 ±0.05
⑥⑤④
RTr1
R1
R2 R2
R1 ①②
RTr2 ③
TERMINAL CONNECTOR ①:EMITTER1 ②:BASE1 ③:COLLECTOR2 ④:EMITTER2 ⑤:BASE2 ⑥:COLLECTOR1
JEITA:- ISAHAYA:USM6F
MAXIMUM RATING (Ta=25℃)
SYMBOL VCBO
VEBO
VCEO IC ICM PC Tj Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Tr1 Tr2
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Total, Ta=25℃)
Junction temperature
Storage temperature
RATING 50 10 6 50 100 200 125
+150 -55~+150
UNIT V V V V mA mA
mW ℃
℃
MARKING
654
1C
123
ISAHAYA ELECTRONICS CORPORATION
RT3T1CU
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
V(BR)CEO ICBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT
Parameter
Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage Input off voltage Input resistor Resistor ratio Gain band width product
Test conditions
I C=100µA,RBE=∞
VCB=50V,I E =0mA
Tr1 VCE=5V,I C=10mA
Tr2 VCE=5V,I C=5mA
Tr1 Tr2
I C=10mA,I B=0. 5mA
Tr1 Tr2
VCE=0.2V,I C=5mA
Tr1 Tr2
VCE=5V,I C=100µA
Tr1
Tr2
Tr1
Tr2
Tr1 Tr2
VCE=6V,I E=10mA
Min 50
50 33
0.8 0.4 7.0 0.7 0.9 8
Limits
Typ Max
0.1
0.1 0.3 0.3
1.5 3.0 0.7 1.2 1.1 0.6 10 13 1.0 1.3 1.0 1.1 10 12 200 150
TYPICAL CHARACTERISTICS (Tr1)
INPUT ON VOLTAGE VS. COLLECTOR CURRENT 100 VCE=0.2V
1000
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT
VCE=5V
Unit
V µA
V V V
KΩ -
MHZ
10 100
DC FORWARD CURRENT GAIN hFE
INPUT ON VOLTAGE VI(ON)(V)
1 1 10
COLLECTOR CURRENT IC(mA)
1000
COLLECTOR CURRENT VS. INPUT OFF VOLTAGE
VCE=5V
100
10 1
10 COLLECTOR CURRENT IC(mA)
100
100
COLLECTOR CURRENT IC(mA)
10 0.0
0.4 0.8 1.2 1.6 INPUT OFF VOLTAGE VI(OFF)(V)
2.0
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
TYPICAL CHARACTERISTICS ( Tr2 )
INPUT ON VOLTAGE VS.COLLECTOR CURRENT
-10 VCE=-0.2V
-1
RT3T1CU
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
1000
DC FORWARD CURRENT GAIN VS.COLLECTOR CURRENT
VCE=-5V
100
DC FORWARD CURRENT GAIN hFE
INPUT ON VOLTEGE VI(ON)(V)
-0.1 -1
-10 -100 COLLECTOR CURRENT I C(mA)
-1000
COLLECTOR CURRENT VS.INPUT OFF VOLTAGE
VCE=-5V
10 -1
-10 -100 COLLECTOR CURRENT IC(mA)
-100
COLLECTOR CURRENT IC(μA)
-10 0
-0.4 -0.8 -1.2 -1.6 -2 INPUT OFF VOLTAGE VI(OFF)(V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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