Transistor. RT3T66M Datasheet

RT3T66M Transistor. Datasheet pdf. Equivalent

Part RT3T66M
Description Transistor
Feature PRELIMINARY RT3T66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial .
Manufacture Isahaya Electronics Corporation
Datasheet
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PRELIMINARY RT3T66M Composite Transistor With Resistor For RT3T66M Datasheet
Recommendation Recommendation Datasheet RT3T66M Datasheet




RT3T66M
PRELIMINARY
RT3T66M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3T66M is a composite transistor built with RT1N430
chip and RT1P430 chip in SC-88 package.
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
OUTLINE DRAWING
2.1
1.25
Unit mm
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
RTr1
R1
RTr2
R1
TERMINAL
CONNECTOR
EMITTER1
BASE1
COLLECTOR2
EMITTER2
BASE2
:COLLECTOR1
JEITA SC-88
MAXIMUM RATING (Ta=25 )
SYMBOL
VCBO
VEBO
VCEO
IC
ICM
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation Total, Ta=25
Junction temperature
Storage temperature
RATING
50
6
50
100
200
150
150
-55 150
UNIT
V
V
V
mA
mA
mW
MARKING
654
.
23
ISAHAYA ELECTRONICS CORPORATION



RT3T66M
PRELIMINARY
ELECTRICAL CHARACTERISTICS (Ta=25 )
Symbol
V(BR)CEO
ICBO
hFE
VCE(sat)
R1
fT
Parameter
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input resistor
Gain band width product
Test conditions
IC=-100 A,RBE=
VCB =-50V,IE=0
VCE=-5V,IC=-1mA
IC=-10mA,IB=-0.5mA
-
VCE=-6V,IE=10mA
RT3T66M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
Limits
Unit
Min Typ Max
50 -
-V
- - 0.1 A
100 -
--
- 0.1 0.3 V
3.3 4.7 6.1 k
- 150 - MHZ
ISAHAYA ELECTRONICS CORPORATION





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