RT3T66M

PRELIMINARY RT3T66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3T66M is a composite transistor built with RT1N430 chip and RT1P430 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting OUTLINE DRAWING 2.1 1.25 Unit mm 2.0 0.65 0.65 APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit 0.13 0.2 0.9 0.65 0 0.1 RTr1 R1 RTr2 R1 TERMINAL CONNECTOR EMITTER1 BASE1 COLLECTOR2 EMITTER2 BASE2 :COLLECTOR1 JEITA SC-88 MAXIMUM RATING (Ta=25 ) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation Total, Ta=25 Junction temperature Storage temperature RATING 50 6 50 100 200 150 150 -55 150 UNIT V V V mA mA mW MARKING 654 . 23 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY ELECTRICAL CHARACTERISTICS (Ta=25 ) Symbol V(BR)CEO ICBO hFE VCE(sat) R1 fT Parameter Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input resistor Gain band width product Test conditions IC=-100 A,RBE= VCB =-50V,IE=0 VCE=-5V,IC=-1mA IC=-10mA,IB=-0.5mA VCE=-6V,IE=10mA RT3T66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type Limits Unit Min Typ Max 50 - -V - - 0.1 A 100 - -- - 0.1 0.3 V 3.3 ...