Transistor. RT3TBBM Datasheet

RT3TBBM Transistor. Datasheet pdf. Equivalent

Part RT3TBBM
Description Transistor
Feature PRELIMINARY RT3TBBM Composite Transistor With Resistor For Switching Application Silicon Epitaxial .
Manufacture Isahaya Electronics Corporation
Datasheet
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PRELIMINARY RT3TBBM Composite Transistor With Resistor For RT3TBBM Datasheet
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RT3TBBM
PRELIMINARY
RT3TBBM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3TBBM is compound transistor built with RT1N231
chip and RT1P231 chip in SC-88 package.
OUTLINE DRAWING
Unitmm
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
⑥⑤④
RTr1
R1
R2
R2
R1
①②
RTr2
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
:COLLECTOR1
JEITASC-88
MAXIMUM RATING (Ta=25) (RTr1_NPN, RTr2_PNP)
SYMBOL
PARAMETER
RATING
VCBO
Collector to Base voltage
50
VEBO
Emitter to Base voltage
10
VCEO
Collector to Emitter voltage
50
VIN Input voltage
12
IC Collector current
100
ICM Peak Collector current
200
PC Collector dissipationTotal, Ta=25℃)
150
Tj Junction temperature
150
Tstg Storage temperature
-55~+150
PNP built in transistor of ””sign is abbreviation.
UNIT
V
V
V
V
mA
mA
mW
MARKING
⑥⑤④
.T B B
①②③
ISAHAYA ELECTRONICS CORPORATION



RT3TBBM
PRELIMINARY
RT3TBBM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25) (RTr1_NPN, RTr2_PNP)
Symbol
V(BR)CEO
ICBO
hFE
VCE(sat)
VI(ON)
VI(OFF)
R1
R2/R1
fT
Parameter
Test conditions
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
I C=100µARBE=
VCB=50VI E =0mA
VCE=5VI C=20mA
I C=10mAI B=0. 5mA
VCE=0.2VI C=5mA
VCE=5VI C=100µA
Gain band width product
VCE=6VI E=10mA
PNP built in transistor of ””sign is abbreviation.
RTr1
RTr2
MAX
50
20
0.7
1.5
0.8
Limits
TYP
1.3
1.1
2.2
1.0
200
150
MIN
0.1
0.3
2.2
2.9
1.2
Unit
V
μA
-
V
V
V
-
MHz
TYPICAL CHARACTERISTICS (RTr1_NPN)
1000
DC FORWARD CURRENT GAIN
VS COLLECTOR CURRENT
VCE=5V
INPUT ON VOLTAGE
VS COLLECTR CURRENT
10
VCE=0.2V
100
1
10
1
0.1
1000
1 10
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT
VS INPUT OFF VOLTAGE
VCE=5V
100
0.1
1
10
COLLECTOR CURRENT IC(mA)
100
100
10
0.0
0.5 1.0 1.5
INPUT OFF VOLTAGE VI(off) (V)
2.0
ISAHAYA ELECTRONICS CORPORATION





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