Transistor. RT3TCCM Datasheet

RT3TCCM Transistor. Datasheet pdf. Equivalent


Part RT3TCCM
Description Transistor
Feature 0.13 0.24 PRELIMINARY RT3TCCM Composite Transistor With Resistor For Switching Application Silicon.
Manufacture Isahaya Electronics Corporation
Datasheet
Download RT3TCCM Datasheet


0.13 0.24 PRELIMINARY RT3TCCM Composite Transistor With Re RT3TCCM Datasheet
Recommendation Recommendation Datasheet RT3TCCM Datasheet




RT3TCCM
PRELIMINARY
RT3TCCM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3TCCM is composite transistor built with RT1N136
chip and RT1P136 chip in SC-88 package.
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
OUTLINE DRAWING
2.1
1.25
Unitmm
APPLICATION
Inverted circuit, Switching circuit,
Interface circuit, Driver circuit
⑥⑤④
RTr1
R1
R2
R2
R1
①②
RTr2
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
:COLLECTOR1
JEITASC-88
JEDEC:-
MAXIMUM RATING (Ta=25) (RTr1_NPN, RTr2_PNP)
SYMBOL
VCBO
VEBO
VCEO
VIN
IC
ICM
PT
Tj
Tstg
PARAMETER
RATING
Collector to Base voltage
50
Emitter to Base voltage
6
Collector to Emitter voltage
50
Input voltage
10
Collector current
100
Peak Collector current
200
Total dissipation
200
Junction temperature
150
Storage temperature
-55~+150
PNP built in transistor of ””sign is abbreviation.
UNIT
V
V
V
V
mA
mA
mW
MARKING
65 4
.TCC
123
ELECTRICAL CHARACTERISTICS (Ta=25) (RTr1_NPN, RTr2_PNP)
Symbol
Parameter
Test conditions
Limits
Min
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
VI(ON)
VI(OFF)
R1
R2/R1
fT
Collector to Emitter break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
I C=100µARBE=
VCB=50VI E =0
VEB=5VI C =0
VCE=5VI C =5mA
I C =10mAI B =0.5mA
VCE=0.2VI C =5mA
VCE=5VI C =100µA
VCE=6V,IE=10mA
RTr1
RTr2
50
332
33
0.4
0.7
8
443
0.1
0.7
0.6
1.0
10
200
150
PNP built in transistor of ””sign is abbreviation.
Max
0.1
642
0.3
1.2
1.3
12
Unit
V
µA
µA
V
V
V
k
MHZ
ISAHAYA ELECTRONICS CORPORATION



RT3TCCM
PRELIMINARY
TYPICAL CHARACTERISTICS (RTr1_NPN)
1000
DC FORWARD CURRENT GAIN
VS COLLECTOR CURRENT
VCE=5V
100
Ta=-40℃
10
Ta=25℃
Ta=85℃
1
0.1 1 10
COLLECTOR CURRENT IC (mA)
INPUT ON VOLTAGE
VS COLLECTOR CURRENT
10
VCE=0.2V
100
Ta=-40℃
Ta=25℃
Ta=85℃
1
0.1
1
10
COLLECTOR CURRENT IC (mA)
100
RT3TCCM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
COLLECTOR TO EMITTER SATURATION
VOLTAGE VS COLLECTOR CURRENT
1
IC/IB=20/1
Ta=85℃
Ta=25℃
0.1 Ta=-40℃
0.01
1
1000
10
COLLECTOR CURRENT IC (mA)
100
COLLECTOR CURRENT
VS INPUT OFF VOLTAGE
VCE=5V
Ta=-40℃
100 Ta=25℃
Ta=85℃
10
0
0.5 1 1.5
INPUT OFF VOLTAGE VI(off) (V)
2
ISAHAYA ELECTRONICS CORPORATION







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