0.13 0.24
PRELIMINARY
RT3TCCM
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
DES...
0.13 0.24
PRELIMINARY
RT3TCCM
Composite
Transistor With Resistor For Switching Application Silicon Epitaxial Type
DESCRIPTION
RT3TCCM is composite
transistor built with RT1N136 chip and RT1P136 chip in SC-88 package.
FEATURE
Silicon epitaxial type Each
transistor elements are independent. Mini package for easy mounting
2.0 0.65 0.65
OUTLINE DRAWING
2.1 1.25
①
②
③
⑥ ⑤ ④
Unit:mm
APPLICATION
Inverted circuit, Switching circuit,
Interface circuit, Driver circuit
0.9 0.7 0~0.1
⑥⑤④
RTr1
R1
R2 R2
R1 ①②
RTr2 ③
TERMINAL CONNECTOR ①:EMITTER1 ②:BASE1 ③:COLLECTOR2 ④:EMITTER2 ⑤:BASE2 ⑥:COLLECTOR1
JEITA:SC-88 JEDEC:-
MAXIMUM RATING (Ta=25℃) (RTr1_
NPN, RTr2_
PNP)
SYMBOL
VCBO VEBO VCEO VIN
IC ICM PT Tj Tstg
PARAMETER
RATING
Collector to Base voltage
50
Emitter to Base voltage
6
Collector to Emitter voltage
50
Input voltage
10
Collector current
100
Peak Collector current
200
Total dissipation
200
Junction temperature
+150
Storage temperature
-55~+150
※
PNP built in
transistor of ”-”sign is abbreviation.
UNIT V V V V mA mA
mW ℃
℃
MARKING
65 4
.TCC
123
ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1_
NPN, RTr2_
PNP)
Symbol
Parameter
Test conditions
Limits Min
V(BR)CEO ICBO IEBO hFE
VCE(sat) VI(ON) VI(OFF)
R1 R2/R1
fT
Collector to Emitter break down voltage Collector cut off current Emitter cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage Input off voltage Input resistor Resistor ratio
Gain band width product
I...