RT3TCCM

0.13 0.24 PRELIMINARY RT3TCCM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3TCCM is composite transistor built with RT1N136 chip and RT1P136 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting 2.0 0.65 0.65 OUTLINE DRAWING 2.1 1.25 ① ② ③ ⑥ ⑤ ④ Unit：mm APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit 0.9 0.7 0～0.1 ⑥⑤④ RTr1 R1 R2 R2 R1 ①② RTr2 ③ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 JEDEC：－ MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP) SYMBOL VCBO VEBO VCEO VIN IC ICM PT Tj Tstg PARAMETER RATING Collector to Base voltage 50 Emitter to Base voltage 6 Collector to Emitter voltage 50 Input voltage 10 Collector current 100 Peak Collector current 200 Total dissipation 200 Junction temperature ＋150 Storage temperature -55～＋150 ※PNP built in transistor of ”－”sign is abbreviation. UNIT V V V V mA mA mW ℃ ℃ MARKING 65 4 .TCC １23 ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1_NPN, RTr2_PNP) Symbol Parameter Test conditions Limits Min V(BR)CEO ICBO IEBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT Collector to Emitter break down voltage Collector cut off current Emitter cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage Input off voltage Input resistor Resistor ratio Gain band width product I...