RT3TFFM

PRELIMINARY RT3TFFM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3TFFM is compound transistor built with RT1N431 chip and RT1P431 chip in SC-88 package. OUTLINE DRAWING Unit：mm FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit ⑥⑤④ RTr1 R1 R2 R2 R1 ①② RTr2 ③ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP) SYMBOL VCBO VEBO VCEO VIN IC ICM PC Tj Tstg PARAMETER RATING Collector to Base voltage 50 Emitter to Base voltage 10 Collector to Emitter voltage 50 Input voltage 30 Collector current 100 Peak Collector current 200 Collector dissipation（Total, Ta=25℃） 150 Junction temperature ＋150 Storage temperature -55～＋150 ※PNP built in transistor of ”－”sign is abbreviation. UNIT V V V V mA mA mW ℃ ℃ MARKING ⑥⑤④ .TF F ①②③ ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3TFFM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1_NPN, RTr2_PNP) Symbol Parameter Test conditions V(BR)CEO ICBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage Input off voltage Input res...