Document
PRELIMINARY
Notice:This is not a final specification Some parametric are subject to change.
DESCRIPTION RTBN14BAP1 is a one chip transistor
with built-in bias transistor.
FEATURE ・Built-in bias resistor (R2=10kΩ) ・High collector current (IC=1A) ・Small package for easy mounting.
APPLICATION Switching.
EQUAIVALENT CIRCUIT
C
B R1
R2 E
〈SMALL-SIGNAL TRANSISTOR〉
RTBN14BAP1
TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
UNIT:mm
4.6 MAX 1.6
1.5
0.8 MIN 2.5
4.2 MAX
E CB
0.53 MAX
1.5 3.0
0.48 MAX
0.4
マーキング MARKING
TERMINAL CONNECTOR
E:EMEI:TエTEミRッタ C:CCBO::LベLコEレーCTクスOタR B:BASE
JEITA:SC-62 EJJEIAEDJDEEC: CS::CS-O6T2-89
JEDEC:―
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector to Base voltage
RATING 80
UNIT V
MARKING
Type Name
VEBO Emitter to Base voltage VCEO Collector to Emitter voltage
10 V 60 V
NP
I C Collector current
1A
I CM Peak collector current
2A
PCM Collector dissipation(Ta=25℃) 500 mW
Tj Junction temperature Tstg Storage temperature
+150 -55~+150
℃ ℃
The last number Marking month of fisical year
Running No.
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS MIN TYP MAX
UNIT
ICBO Collector cut off current
VCE=60V,IE=0
― ― 0.1 μA
VCE(sat) Collector to Emitter saturation voltage
IB=7mA,IC=0.7A
― ― 0.4
V
VI(off) Input off voltage
VCE=5V,IC=100μA
0.3 ―
―
V
hFE1 DC forward current gain1
VCE=2V,IC=0.1A
200 ― ― ―
hFE2 DC forward current gain2
VCE=2V,IC=0.5A
300 ― ― ―
hFE3 DC forward current gain3
VCE=2V,IC=1A
200 ― ― ―
R2 Emitter-base resistor
―
7 10 13 kΩ
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Aug.2013
.