RTBN226AP1

PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. DESCRIPTION RTBN226AP1 is a one chip transistor with built-in bias transistor. FEATURE ・Built-in bias resistor （R1=0.22kΩ,R2=2.2kΩ） ・High collector current （IC=1A） ・Small package for easy mounting. APPLICATION Switching. EQUAIVALENT CIRCUIT C B R1 R2 E 〈SMALL-SIGNAL TRANSISTOR〉 RTBN226AP1 TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING UNIT：mm 4.6 MAX 1.6 1.5 0.8 MIN 2.5 4.2 MAX E CB 0.53 MAX 1.5 3.0 0.48 MAX 0.4 マーキング MARKING TERMINAL CONNECTOR E：EMＥI:TエTEミRッタ C：CＣＢO::LベLコEレーCTクスOタR B：BASE JEITA:SC-62 EJJEIAEDJDEEC: CS::CS-O6T2-89 JEDEC：― MAXIMUM RATING（Ta=25℃） SYMBOL VCBO VEBO VCEO IC I CM PCM Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RATING 80 10 60 1 2 500 ＋150 -55～＋150 UNIT V V V A A mW ℃ ℃ MARKING Type Name NN The last number Marking month of fisical year Running No. ELECTRICAL CHARACTERISTICS（Ta=25℃） SYMBOL PARAMETER TEST CONDITIONS ICBO VI(on) VI(off) ｈＦＥ1 ｈＦＥ2 ｈＦＥ3 R1 Collector cut off current Input on voltage Input off voltage DC forward current gain1 DC forward current gain2 DC forward current gain3 Input resistor VCE=60V，IE=0 VCE=0.5V，IC=0.8A VCE=5V，IC=100μA VCE=2V，IC=0.1A VCE=2V，IC=0.5A VCE=2V，IC=1A ― MIN ― ― 0.3 100 300 200 0.154...