RTE13J1M

PRELIMINARY DESCRIPTION RTE13J1M is compound transistor built with correspond INJ0001AX chip and 8.2V Zener diode in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting OUTLINE DRAWING ① ② ③ 2.0 0.65 0.65 APPLICATION Power supply circuit, Driver circuit, etc RTE13J1M Composite Transistor Zener Diode Silicon P-channel MOSFET Unit：mm 2.1 1.25 ⑥ ⑤ ④ 0.13 0.24 0.9 0.65 0～0.1 ⑥⑤④ Di MOSFET ①②③ ①：ANODE ②：ＮＣ ③：DRAIN ④：SOURCE ⑤：GATE ⑥：CATHODE JEITA：SC-88 JEDEC：－ MAXIMUM RATING(Ta=25℃) SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage -50 V VGSS ID Gate-source voltage Drain current(DC) MOSFET ±8 -100 V mA IDP Drain current(Pulse) -400(*1) mA PT Total power dissipation（Ta=25℃） 150(*2) MOSFET Tj Junction temperature Di +150 Tstg Storage temperature Common -55～+150 mW ℃ ℃ *1：Pw≦10μs, Duty cycle≦1% *2：Mounted on glass epoxy board(9mm×19mm×1mm) MARKING ⑥⑤ ④ X03 ①②③ ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RTE13J1M Composite Transistor Zener Diode Silicon P-channel MOSFET ELECTRICAL CHARACTERISTICS（Ta=25℃） 【 MOSFET 】 SYMBOL PARAMETER TEST CONDITIONS V(BR)DSS IGSS IDSS Vth | Yfs | RDS(ON) Ciss Coss Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance I D=-100μA, VGS=0V V GS=±5V, VDS=0V V DS=-50V ,VGS=0V I D=-250...