Document
〈SMALL-SIGNAL TRANSISTOR〉
RTGN432P
TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE
DISCRIPTION RTGN432P is a one chip transistor with built-in bias transistor.
FEATURE ● Built-in bias resistor (R1=4.7kΩ,R2=10kΩ) ● High collector current IC=1A ● Built-in zener diode between collector and base
APPLICATION Motor driver circuit
OUTLINE DRAWING
4.6 MAX 1.6
Unit:mm
1.5
0.8 MIN
2.5 4.2 MAX E CB
0.53 MAX
1.5 3.0
0.48 MAX
0.4
MARKING
EQUIVALENT CIRCUIT
C
B R1
R2 E
TERMINAL CONNECTOR
E: EMITTER
C: COLLECTOR
B: BASE
JEDEC :
MARKING
A part of EIAJ standard
NE
The last number Marking month of fisical year
Running No.
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO VEBO VCEO
IC ICM PC Tj Tstg
Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current (DC) Collector current (pulse) Collector dissipation Junction temperature Storage temperature
RATING 60±10 10 60±10 1 2 500 +150
-55~+150
UNIT V V V A A
mW ℃
℃
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
RTGN432P
TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Parameter
ICBO VOL VIL hFE1 hFE2 hFE3 R1 R2
Collector cut off current Output voltage Input voltage (OFF) DC forward current gain DC forward current gain DC forward current gain Input resistor Emitter – Base resistor
Test conditions
VCB=40V,IE=0 VI=5V,IC=200mA VCE=5V,IC=100μA VCE=2V,IC=0.1A VCE=2V,IC=0.5A VCE=2V,IC=1A ― ―
Limits
Min Typ Max
― ― 0.1
― ― 0.2
0.3 ― ―
200 ―
―
300 ―
―
200 ―
―
3.29 4.70 6.11
7 10 13
Unit
uA V V ― ― ― KΩ KΩ
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials
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Jan.2003
.