Transistor. RTGN14BAP Datasheet

RTGN14BAP Transistor. Datasheet pdf. Equivalent

Part RTGN14BAP
Description Transistor
Feature 〈SMALL-SIGNAL TRANSISTOR〉 RTGN14BAP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EP.
Manufacture Isahaya Electronics Corporation
Datasheet
Download RTGN14BAP Datasheet

〈SMALL-SIGNAL TRANSISTOR〉 RTGN14BAP TRANSISTOR WITH RESISTOR RTGN14BAP Datasheet
Recommendation Recommendation Datasheet RTGN14BAP Datasheet




RTGN14BAP
SMALL-SIGNAL TRANSISTOR
RTGN14BAP
TRANSISTOR WITH RESISTOR
FOR SWITHING APPLICATION
SILICON NPN EPITAXIAL TYPE
DISCRIPTION
RTGN14BAP is a one chip transistor with
built-in bias transistor.
FEATURE
Built-in bias resistor R2=10k
High collector current IC=1A
Built-in zener diode between collector and base
APPLICATION
Motor driver circuit
OUTLINE DRAWING
4.6 MAX
1.6
Unitmm
1.5
0.8 MIN
2.5 4.2 MAX
E CB
0.53
MAX
1.5
3.0
0.48 MAX
0.4
MARKING
EQUIVALENT CIRCUIT
C
B
R1
R2
E
TERMINAL CONNECTOR
: EMITTER
: COLLECTOR
: BASE
JEDEC :
MARKING
A part of EIAJ standard
NG
The last number Marking month
of fisical year
Running No.
MAXIMUM RATINGTa=25℃)
SYMBOL
PARAMETER
VCBO
VEBO
VCEO
IC
ICM
PC
Tj
Tstg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current (DC)
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
RATING
60±10
10
60±10
1
2
500
150
-55~+150
UNIT
V
V
V
A
A
mW
ISAHAYA ELECTRONICS CORPORATION



RTGN14BAP
SMALL-SIGNAL TRANSISTOR
RTGN14BAP
TRANSISTOR WITH RESISTOR
FOR SWITHING APPLICATION
SILICON NPN EPITAXIAL TYPE
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Parameter
ICBO
VIL
hFE1
hFE2
hFE3
VCE(sat)
R
Collector cut off current
Input voltage (OFF)
DC forward current gain
DC forward current gain
DC forward current gain
C to E saturation voltage
Emitter – Base resistor
Test conditions
VCB=40V,IE=0
VCE=5V,IC=100μA
VCE=2V,IC=0.1A
VCE=2V,IC=0.5A
VCE=2V,IC=1A
Ic=500mA,IB=5mA
Limits
Min Typ Max
― ― 0.1
0.3 ― ―
200 ―
300 ―
200 ―
400
7 10 13
Unit
uA
V
mV
ISAHAYA ELECTRONICS CORPORATION





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