Triac. BCR10CS-12LB Datasheet

BCR10CS-12LB Triac. Datasheet pdf. Equivalent

Part BCR10CS-12LB
Description Triac
Feature BCR10CS-12LB Triac Medium Power Use Preliminary Datasheet R07DS0224EJ0400 (Previous: REJ03G0469-030.
Manufacture Renesas
Datasheet
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BCR10CS-12LB Triac Medium Power Use Preliminary Datasheet R BCR10CS-12LB Datasheet
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BCR10CS-12LB
BCR10CS-12LB
Triac
Medium Power Use
Preliminary Datasheet
R07DS0224EJ0400
(Previous: REJ03G0469-0300)
Rev.4.00
Dec 14, 2010
Features
IT (RMS) : 10 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
Outline
The product guaranteed maximum junction
temperature of 150°C
Non-Insulated Type
Planar Passivation Type
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
RENESAS Package code: PRSS0004AB-A
(Package name: TO-220S)
EOL PKG4
1
23
2, 4
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo
systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid
state relay, copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Ratings
10
100
41.6
5
0.5
10
2
– 40 to +150
– 40 to +150
1.3
Unit
A
A
A2s
W
W
V
A
C
C
g
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 128CNote3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
R07DS0224EJ0400 Rev.4.00
Dec 14, 2010
Page 1 of 8



BCR10CS-12LB
BCR10CS-12LB
Preliminary
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2




IDRM
VTM
VFGT
VRGT
VRGT
IFGT
IRGT
IRGT
— 2.0 mA Tj = 150C, VDRM applied
— 1.5 V Tc = 25C, ITM = 15 A,
Instantaneous measurement
— 1.5 V Tj = 25C, VD = 6 V, RL = 6 ,
— 1.5 V RG = 330
— 1.5
V
— 30Note6 mA Tj = 25C, VD = 6 V, RL = 6 ,
— 30Note6 mA RG = 330
30Note6
mA
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltageNote5
VGD
Rth (j-c)
(dv/dt)c
0.2/0.1
10/1
— V Tj = 125C/150C, VD = 1/2 VDRM
1.8 C/W Junction to caseNote3 Note4
— V/s Tj = 125C/150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
6. High sensitivity (IGT 20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 5.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0224EJ0400 Rev.4.00
Dec 14, 2010
Page 2 of 8





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