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CR6LM-12B Dataheets PDF



Part Number CR6LM-12B
Manufacturers Renesas
Logo Renesas
Description Thyristor
Datasheet CR6LM-12B DatasheetCR6LM-12B Datasheet (PDF)

CR6LM-12B Thyristor Medium Power Use Preliminary Datasheet R07DS0210EJ0100 Rev.1.00 Dec 03, 2010 Features  IT (AV) : 6 A  VDRM : 600 V  IGT : 10 mA  Viso : 1800V  Insulated Type  Planar Passivation Type  UL Recognized : Yellow Card No. E223904 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 1 23 2 3 1 1. Cathode 2. Anode 3. Gate Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control .

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CR6LM-12B Thyristor Medium Power Use Preliminary Datasheet R07DS0210EJ0100 Rev.1.00 Dec 03, 2010 Features  IT (AV) : 6 A  VDRM : 600 V  IGT : 10 mA  Viso : 1800V  Insulated Type  Planar Passivation Type  UL Recognized : Yellow Card No. E223904 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 1 23 2 3 1 1. Cathode 2. Anode 3. Gate Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V R07DS0210EJ0100 Rev.1.00 Dec 03, 2010 Page 1 of 7 CR6LM-12B Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Isolation voltage Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Viso Ratings 9.4 6 90 34 5 0.5 6 10 2 – 40 to +150 – 40 to +150 1.5 1800 Preliminary Unit A A A A2s W W V V A °C °C g V Conditions Commercial frequency, sine half wave 180° conduction, Tc = 110°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, each terminal to case Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Symbol IRRM IDRM VTM Min. — — — Typ. — — — Max. 2.0/5.0 2.0/5.0 1.7 Unit mA mA V Gate trigger voltage VGT — — 1.0 V Gate non-trigger voltage VGD 0.2/0.1 — — V Gate trigger current IGT — — 10 mA Holding current IH — 15 — mA Thermal resistance Rth (j-c) — — 4.0 C/W Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. Test conditions Tj = 125°C/150°C, VRRM applied Tj = 125°C/150°C, VDRM applied Tc = 25°C, ITM = 20 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 1 A Tj = 125°C/150°C, VD = 1/2 VDRM Tj = 25°C, VD = 6 V, IT = 1 A Tj = 25°C, VD = 12 V Junction to caseNote1 R07DS0210EJ0100 Rev.1.00 Dec 03, 2010 Page 2 of 7 CR6LM-12B Performance Curves Maximum On-State Characteristics 103 Tc = 125°C 102 On-State Current (A) 101 Gate Voltage (V) 100 01 2345 On-State Voltage (V) Gate Characteristics 102 101 VFGM = 6V PGM = 5W PG(AV) VGT = 1V = 0.5W 100 IGT = 10mA VGD = 0.1V IFGM = 2A 10-1 101 102 103 Gate Current (mA) Gate Trigger Voltage vs. Junction Temperature 103 Typical Example (%) 100 × 102 Gate Trigger Voltage (Tj = t°C) Gate Trigger Voltage (Tj = 25°C) 101 –40 0 40 80 120 160 Junction Temperature (°C) R07DS0210EJ0100 Rev.1.00 Dec 03, 2010 Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) × 100 (%) Transient Thermal Impedance (°C/W) Surge On-State Current (A) Preliminary Rated Surge On-State Current 100 80 60 40 20 0 100 101 102 Conduction Time (Cycles at 50Hz) Gate Trigger Current vs. Junction Temperature 103 Typical Example 102 101 100 –40 0 40 80 120 160 Junction Temperature (°C) Maximum Transient Thermal Impedance Characteristics (Junction to case) 102 101 100 10–1 10–3 10–2 10–1 100 Time (s) 101 Page 3 of 7 CR6LM-12B Average Power Dissipation (W) Average Power Dissipation (W) Maximum Average Power Dissipation (Single-Phase Half Wave) 16 14 12 10 θ = 30° 8 180° 120° 90° 60° 6 θ 4 360° 2 Resistive, inductive loads 0 0 2 4 6 8 10 12 Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) 16 14 12 θ = 30° 180° 120° 10 90° 8 60° 6 4 θθ 2 360° Resistive loads 0 0 2 4 6 8 10 12 Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) 16 14 90° 12 60° 10 θ = 30° 8 DC 270° 180° 120° 6 4θ 360° 2 Resistive, inductive loads 0 0 2 4 6 8 10 12 Average On-State Current (A) Average Power Dissipation (W) R07DS0210EJ0100 Rev.1.00 Dec 03, 2010 Case Temperature (°C) Case Temperature (°C) Case Temperature (°C) Preliminary Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) 160 140 θ 120 360° 100 Resistive, inductive loads 80 180° 60 120° 40 90° 20 60° θ = 30° 0 024 6 8 10 12 Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 140 θ θ 120 360° 100 Resistive loads 80 60 180° 40 120° 90° 20 60° θ = 30° 0 0 2 4 6 8 10 12 Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 160 140 120 100 Resistive, 80 inductive loads θ 60 360° 40 20 60° 180° 270° θ = 30° 90° 120° DC 0 0 2 4 6 8 10 12 Average On-State Current (A) Page 4 of 7 CR6LM-12B Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 1.


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