Document
CR6LM-12B
Thyristor
Medium Power Use
Preliminary Datasheet
R07DS0210EJ0100 Rev.1.00
Dec 03, 2010
Features
IT (AV) : 6 A VDRM : 600 V IGT : 10 mA Viso : 1800V
Insulated Type Planar Passivation Type UL Recognized : Yellow Card No. E223904
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL)
1 23
2
3 1
1. Cathode 2. Anode 3. Gate
Applications
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage
Symbol
VRRM VRSM VR (DC) VDRM VD (DC)
Voltage class 12 600 720 480 600 480
Unit
V V V V V
R07DS0210EJ0100 Rev.1.00 Dec 03, 2010
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CR6LM-12B
Parameter RMS on-state current Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Isolation voltage
Symbol IT (RMS) IT (AV)
ITSM
I2t
PGM PG (AV) VFGM VRGM IFGM
Tj Tstg — Viso
Ratings 9.4 6
90
34
5 0.5 6 10 2 – 40 to +150 – 40 to +150 1.5 1800
Preliminary
Unit A A
A
A2s
W W V V A °C °C g V
Conditions Commercial frequency, sine half wave 180° conduction, Tc = 110°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Typical value Ta = 25°C, AC 1 minute, each terminal to case
Electrical Characteristics
Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage
Symbol IRRM IDRM VTM
Min. — — —
Typ. — — —
Max. 2.0/5.0 2.0/5.0
1.7
Unit mA mA V
Gate trigger voltage
VGT — — 1.0 V
Gate non-trigger voltage
VGD 0.2/0.1
—
—
V
Gate trigger current
IGT — — 10 mA
Holding current
IH — 15 — mA
Thermal resistance
Rth (j-c)
—
—
4.0 C/W
Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Test conditions Tj = 125°C/150°C, VRRM applied Tj = 125°C/150°C, VDRM applied Tc = 25°C, ITM = 20 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 125°C/150°C, VD = 1/2 VDRM Tj = 25°C, VD = 6 V, IT = 1 A Tj = 25°C, VD = 12 V Junction to caseNote1
R07DS0210EJ0100 Rev.1.00 Dec 03, 2010
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CR6LM-12B
Performance Curves
Maximum On-State Characteristics 103
Tc = 125°C
102
On-State Current (A)
101
Gate Voltage (V)
100 01 2345 On-State Voltage (V)
Gate Characteristics 102
101 VFGM = 6V
PGM = 5W
PG(AV)
VGT = 1V
= 0.5W
100 IGT = 10mA
VGD = 0.1V IFGM = 2A
10-1 101 102 103 Gate Current (mA)
Gate Trigger Voltage vs. Junction Temperature
103 Typical Example
(%)
100
×
102
Gate Trigger Voltage (Tj = t°C) Gate Trigger Voltage (Tj = 25°C)
101 –40 0 40 80 120 160 Junction Temperature (°C)
R07DS0210EJ0100 Rev.1.00 Dec 03, 2010
Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C)
×
100
(%)
Transient Thermal Impedance (°C/W)
Surge On-State Current (A)
Preliminary
Rated Surge On-State Current
100 80 60 40 20 0 100 101 102
Conduction Time (Cycles at 50Hz)
Gate Trigger Current vs. Junction Temperature
103 Typical Example
102
101
100 –40 0 40 80 120 160 Junction Temperature (°C)
Maximum Transient Thermal Impedance Characteristics (Junction to case)
102
101
100
10–1 10–3
10–2
10–1
100
Time (s)
101
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CR6LM-12B
Average Power Dissipation (W)
Average Power Dissipation (W)
Maximum Average Power Dissipation (Single-Phase Half Wave)
16
14 12
10 θ = 30° 8
180°
120° 90° 60°
6 θ
4 360°
2 Resistive, inductive loads
0 0 2 4 6 8 10 12
Average On-State Current (A)
Maximum Average Power Dissipation (Single-Phase Full Wave)
16
14
12 θ = 30°
180° 120°
10 90°
8 60°
6
4 θθ
2 360° Resistive loads
0 0 2 4 6 8 10 12
Average On-State Current (A)
Maximum Average Power Dissipation (Rectangular Wave)
16
14 90°
12 60°
10 θ = 30°
8
DC 270° 180°
120°
6
4θ 360°
2 Resistive, inductive loads
0 0 2 4 6 8 10 12
Average On-State Current (A)
Average Power Dissipation (W)
R07DS0210EJ0100 Rev.1.00 Dec 03, 2010
Case Temperature (°C)
Case Temperature (°C)
Case Temperature (°C)
Preliminary
Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave)
160
140 θ 120 360°
100 Resistive, inductive loads
80 180°
60 120°
40 90° 20 60°
θ = 30° 0
024
6
8 10 12
Average On-State Current (A)
Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave)
160
140 θ θ 120 360°
100 Resistive loads
80
60 180° 40 120°
90° 20 60°
θ = 30° 0
0 2 4 6 8 10 12
Average On-State Current (A)
Allowable Case Temperature vs. Average On-State Current (Rectangular Wave)
160
140
120
100 Resistive,
80 inductive loads θ 60 360°
40
20 60° 180° 270° θ = 30° 90° 120° DC
0 0 2 4 6 8 10
12
Average On-State Current (A)
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CR6LM-12B
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 1.