Document
NP16N04YUG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
Description
The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)
• Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON
Ordering Information
Part No. NP16N04YUG-E1-AY ∗1 NP16N04YUG-E2-AY ∗1
Lead Plating Pure Sn (Tin)
Packing Tape 2500 p/reel Taping (E1 type)
Taping (E2 type)
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package 8-pin HSON
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) ∗2
Channel Temperature
Storage Temperature Repetitive Avalanche Current ∗3 Repetitive Avalanche Energy ∗3
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR
Ratings 40 ±20 ±16 ±48 36 1.0 175
−55 to +175 13 12
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance ∗2
Rth(ch-C) Rth(ch-A)
4.17 150
°C/W °C/W
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 1.6 mmt with 4% copper area (35 μm) ∗3. Tch(peak) ≤ 150°C, RG = 25 Ω
Unit V V A A W W °C °C A mJ
Caution This product is an electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. HBM (C = 100 pF, R = 1.5 kΩ) ± 500 V.
R07DS0362EJ0100 Rev.1.00 Jun 13, 2011
Page 1 of 6
NP16N04YUG
Electrical Characteristics (TA = 25°C)
Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance ∗1 Drain to Source On-state Resistance ∗1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge Note: ∗1. Pulsed test
Symbol IDSS IGSS VGS(th) | yfs | RDS(on)
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
MIN.
2.0 4
TYP.
3.0 8 20
740 83 57 10 4 19 5 16 5 6 0.9 25 24
MAX. 1
±100 4.0
25
1110 110 100 20 10 38 13 24
1.5
Chapter Title
Unit μA nA V S mΩ
pF pF pF ns ns ns ns nC nC nC V ns nC
Test Conditions VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μ A VDS = 5 V, ID = 8 A VGS = 10 V, ID = 8 A
VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 8 A, VGS = 10 V, RG = 0 Ω
VDD = 32 V, VGS = 10 V, ID = 16 A IF = 16 A, VGS = 0 V IF = 16 A, VGS = 0 V, di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RG = 25 Ω
PG. VGS = 20 → 0 V
50 Ω
L VDD
ID VDD
IAS
BVDSS VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS 0
τ τ = 1 μs Duty Cycle ≤ 1%
RL VDD
VGS
VGS
Wave Form
10% 0
VDS
90% VDS
VDS
Wave Form
0
td(on)
90% VGS
90% 10% 10%
tr td(off)
tf
ton toff
D.U.T. IG = 2 mA
PG. 50 Ω
RL VDD
R07DS0362EJ0100 Rev.1.00 Jun 13, 2011
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NP16N04YUG
Chapter Title
dT - Percentage of Rated Power - %
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120
100
80
60
40
20
0 0 25 50 75 100 125 150 175
TC - Case Temperature - °C
ID - Drain Current - A
FORWARD BIAS SAFE OPERATING AREA
1000
RDS(ON) Limited
100 (VGS = 10 V)
TC = 25°C Single Pulse
ID(Pulse) = 48 A PW = 100 μs
10
1
0.1 0.1
Power Disspation Limited
10 ms
Secondary Brakedown Limited
1 ms
1 10
100
VDS - Drain to Source Voltage - V
PT - Total Power Dissipation - W
40 35 30 25 20 15 10
5 0
0
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
25 50 75 100 125 150 175
TC - Case Temperature - °C
1000 100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-A) = 150°C/W
rth(t) - Transient Thermal Resistance - °C/W
10
1
0.1
0.01 100 μ
Rth(ch-C) = 4.17°C/W
Single pulse Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt
with 4% copper area (35 μm)
1m
10 m
100 m 1
10 100 1000
PW - Pulse Width - s
R07DS0362EJ0100 Rev.1.00 Jun 13, 2011
Page 3 of 6
NP16N04YUG
ID - Drain Current - A
60 50 40 30 20 10
0 0
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
VGS = 10 V
Pulsed 0.5 1 1.5 2
VDS - Drain to Source Voltage - V
VGS(th) - Gate to Source Threshold Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE
4
VDS = VGS 3.5 ID = 250 μA
3
2.5
2
1.5
1
0.5
0
-100 -50
0
50 100 150 200
Tch - Channel Temperature - °C
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 35 30 25 20 15 10 5 VGS = 10 V
Pulsed 0
0.1 1 10 100
ID - Drain Current - A
R07DS0362EJ0100 Rev.1.00 Jun 13, 2011
RDS(on) - Drain to Source On-state Resistance - mΩ
| yfs | -.