EFFECT TRANSISTOR. NP16N04YUG Datasheet

NP16N04YUG TRANSISTOR. Datasheet pdf. Equivalent

Part NP16N04YUG
Description MOS FIELD EFFECT TRANSISTOR
Feature NP16N04YUG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0362EJ0100 Rev.1.00 Jun 13, 2011.
Manufacture Renesas
Datasheet
Download NP16N04YUG Datasheet

NP16N04YUG MOS FIELD EFFECT TRANSISTOR Preliminary Data She NP16N04YUG Datasheet
Recommendation Recommendation Datasheet NP16N04YUG Datasheet




NP16N04YUG
NP16N04YUG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0362EJ0100
Rev.1.00
Jun 13, 2011
Description
The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)
Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V)
Designed for automotive application and AEC-Q101 qualified
Small size package 8-pin HSON
Ordering Information
Part No.
NP16N04YUG-E1-AY 1
NP16N04YUG-E2-AY 1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel Taping (E1 type)
Taping (E2 type)
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Package
8-pin HSON
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) 2
Channel Temperature
Storage Temperature
Repetitive Avalanche Current 3
Repetitive Avalanche Energy 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±16
±48
36
1.0
175
55 to +175
13
12
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance 2
Rth(ch-C)
Rth(ch-A)
4.17
150
°C/W
°C/W
Notes: 1. TC = 25°C, PW 10 μs, Duty Cycle 1%
2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 1.6 mmt with 4% copper area (35 μm)
3. Tch(peak) 150°C, RG = 25 Ω
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Caution This product is an electrostatic-sensitive device due to low ESD capability and should be handled
with caution for electrostatic discharge. HBM (C = 100 pF, R = 1.5 kΩ) ± 500 V.
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
Page 1 of 6



NP16N04YUG
NP16N04YUG
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed test
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
2.0
4
TYP.
3.0
8
20
740
83
57
10
4
19
5
16
5
6
0.9
25
24
MAX.
1
±100
4.0
25
1110
110
100
20
10
38
13
24
1.5
Chapter Title
Unit
μA
nA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 40 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μ A
VDS = 5 V, ID = 8 A
VGS = 10 V, ID = 8 A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 20 V, ID = 8 A,
VGS = 10 V,
RG = 0 Ω
VDD = 32 V,
VGS = 10 V,
ID = 16 A
IF = 16 A, VGS = 0 V
IF = 16 A, VGS = 0 V,
di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
90%
VGS
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
Page 2 of 6





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)