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NP16N04YUG Dataheets PDF



Part Number NP16N04YUG
Manufacturers Renesas
Logo Renesas
Description MOS FIELD EFFECT TRANSISTOR
Datasheet NP16N04YUG DatasheetNP16N04YUG Datasheet (PDF)

NP16N04YUG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A) • Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON Ordering Information Part No. NP16N04YUG-E1-AY ∗1.

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NP16N04YUG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A) • Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON Ordering Information Part No. NP16N04YUG-E1-AY ∗1 NP16N04YUG-E2-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tape 2500 p/reel Taping (E1 type) Taping (E2 type) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package 8-pin HSON Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) ∗2 Channel Temperature Storage Temperature Repetitive Avalanche Current ∗3 Repetitive Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 ±20 ±16 ±48 36 1.0 175 −55 to +175 13 12 Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-C) Rth(ch-A) 4.17 150 °C/W °C/W Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 1.6 mmt with 4% copper area (35 μm) ∗3. Tch(peak) ≤ 150°C, RG = 25 Ω Unit V V A A W W °C °C A mJ Caution This product is an electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. HBM (C = 100 pF, R = 1.5 kΩ) ± 500 V. R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 Page 1 of 6 NP16N04YUG Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance ∗1 Drain to Source On-state Resistance ∗1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge Note: ∗1. Pulsed test Symbol IDSS IGSS VGS(th) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr MIN. 2.0 4 TYP. 3.0 8 20 740 83 57 10 4 19 5 16 5 6 0.9 25 24 MAX. 1 ±100 4.0 25 1110 110 100 20 10 38 13 24 1.5 Chapter Title Unit μA nA V S mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Test Conditions VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μ A VDS = 5 V, ID = 8 A VGS = 10 V, ID = 8 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 8 A, VGS = 10 V, RG = 0 Ω VDD = 32 V, VGS = 10 V, ID = 16 A IF = 16 A, VGS = 0 V IF = 16 A, VGS = 0 V, di/dt = 100 A/μ s TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω L VDD ID VDD IAS BVDSS VDS Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. RG VGS 0 τ τ = 1 μs Duty Cycle ≤ 1% RL VDD VGS VGS Wave Form 10% 0 VDS 90% VDS VDS Wave Form 0 td(on) 90% VGS 90% 10% 10% tr td(off) tf ton toff D.U.T. IG = 2 mA PG. 50 Ω RL VDD R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 Page 2 of 6 NP16N04YUG Chapter Title dT - Percentage of Rated Power - % Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C ID - Drain Current - A FORWARD BIAS SAFE OPERATING AREA 1000 RDS(ON) Limited 100 (VGS = 10 V) TC = 25°C Single Pulse ID(Pulse) = 48 A PW = 100 μs 10 1 0.1 0.1 Power Disspation Limited 10 ms Secondary Brakedown Limited 1 ms 1 10 100 VDS - Drain to Source Voltage - V PT - Total Power Dissipation - W 40 35 30 25 20 15 10 5 0 0 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 25 50 75 100 125 150 175 TC - Case Temperature - °C 1000 100 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-A) = 150°C/W rth(t) - Transient Thermal Resistance - °C/W 10 1 0.1 0.01 100 μ Rth(ch-C) = 4.17°C/W Single pulse Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% copper area (35 μm) 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 Page 3 of 6 NP16N04YUG ID - Drain Current - A 60 50 40 30 20 10 0 0 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 10 V Pulsed 0.5 1 1.5 2 VDS - Drain to Source Voltage - V VGS(th) - Gate to Source Threshold Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 4 VDS = VGS 3.5 ID = 250 μA 3 2.5 2 1.5 1 0.5 0 -100 -50 0 50 100 150 200 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 35 30 25 20 15 10 5 VGS = 10 V Pulsed 0 0.1 1 10 100 ID - Drain Current - A R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 RDS(on) - Drain to Source On-state Resistance - mΩ | yfs | -.


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