Document
QN7002
N-CHANNEL MOSFET FOR SWITCHING
Preliminary Data Sheet
R07DS0269EJ0100 Rev.1.00
Mar 11, 2011
Description
The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source.
Features • Directly driven by a 4.5 V power source.
• Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.2 Ω MAX. (VGS = 4.5 V, ID = 50 mA)
Ordering Information
Part Number
Lead Plating
Packing
Package
QN7002-T1B-AT
Pure Sn
3000p/Reel
SC-59 (Mini Mold)
Remark "-AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Remark for Agent
ORDER NUMBER “2SK4079(1)” must be used to order, instead of “QN7002”. For instance, “2SK4079(1)-T1B-AT”
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note Total Power Dissipation Channel Temperature Storage Temperature
Note PW ≤ 10 μs, Duty Cycle ≤ 1%
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
60 ±20 200 ±800 200 150 −55 to +150
V V mA mA mW °C °C
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge.
VESD ±400 V (MIL STD; C = 100 pF, R = 1.5 kΩ, 5 times), as reference value.
R07DS0269EJ0100 Rev.1.00 Mar 11, 2011
Page 1 of 6
QN7002 Electrical Characteristics (TA = 25°C)
Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Body Diode Forward Voltage Note
Note Pulsed
Symbol
Test Conditions
IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on)
tr td(off)
tf QG VF(S-D)
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μA VDS = 10 V, ID = 100 mA VGS = 10 V, ID = 100 mA VGS = 4.5 V, ID = 50 mA VDS = 10 V, VGS = 0 V, f = 1.0 MHz VDD = 10 V, ID = 200 mA, VGS = 10 V, RG = 10 Ω ID = 200 mA, VDD = 25 V, VGS = 10 V IF = 200 mA, VGS = 0 V
Test Circuit Switching Time
D.U.T.
RG PG.
VGS 0
τ τ = 1 μs Duty Cycle ≤ 1%
RL VDD
VGS
VGS
Wave Form
0 10%
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90% 10% 10%
tr td(off) tf
ton toff
Chapter Title
MIN. TYP. MAX. UNIT 1 μA
±10 μA 1.0 2.5 V 150 mS
2.1 2.7 Ω 2.4 3.2 Ω 20 pF 9 pF 2 pF 16 ns 6.5 ns 82 ns 32 ns 2 nC 0.86 V
R07DS0269EJ0100 Rev.1.00 Mar 11, 2011
Page 2 of 6
dT - Percentage of Rated Power - %
QN7002 Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175
TA – Ambient Temperature - °C
ID - Drain Current - A
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
0 0
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
VGS = 10 V
4.5 V
Pulsed
246 VDS - Drain to Source Voltage - V
8
VGS(th) - Gate Threshold Voltage - V
GATE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3
VDS = VGS ID = 250 μ A 2.5
2
1.5
1 -50 0 50 100 150 Tch - Channel Temperature - °C
R07DS0269EJ0100 Rev.1.00 Mar 11, 2011
| yfs | - Forward Transfer Admittance - S
ID - Drain Current - A
PT - Total Power Dissipation - W
Chapter Title
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
0.2
0.1
0.0 0
25 50 75 100 125 150 175
TA – Ambient Temperature - °C
FORWARD TRANSFER CHARACTERISTICS
1 VDS = 5 V Pulsed
0.1
0.01
0.001
TA = 125°C 75°C 25°C
−25°C
0.0001 0
12345 VGS - Gate to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
1 TA = −25°C 25°C 75°C 125°C
0.1
0.01 0.01
VDS = 10 V Pulsed
0.1 ID - Drain Current - A
1
Page 3 of 6
QN7002
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
10 Pulsed
RDS(on) - Drain to Source On-state Resistance - Ω
RDS(on) - Drain to Source On-state Resistance - Ω
5
0 0.001
VGS = 4.5 V 10 V
0.01 0.1
1
ID - Drain Current - A
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
5 Pulsed
4 VGS = 4.5 V, ID = 50 mA
3
2 10 V, 100 mA
1
0 -25
0 25 50 75 100 125 Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
tf
VDD = 10 V, VGS = 10 V RG = 10 Ω
100
td(off)
10 td(on)
tr 1
0.001
0.01 0.1 ID - Drain Current - A
1
td(on), tr, td(off), tf - Switching Time - ns
R07DS0269EJ0100 Rev.1.00 Mar 11, 2011
VGS – Gate to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - Ω
Chapter Title
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
10 Pulsed
5 ID = 100 mA
50 mA 0
0 2 4 6 8 10
VGS – Gate to Source Voltage - V
12
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100
10
1
VGS = 0 V f = 1.0 MHz 0.1 0.1 1
Ciss Coss Crss
10 100
VDS - Drain to Source Voltage – V
DYNAMIC INPUT CHARACTERISTICS
10
8 VDD = 48 V 30 V 25 V
6
4
2 ID = 200 mA
0 0123
QG – Gate Chage - nC
Page 4 of 6
IF – Diode Forward Current - A
QN7002
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1 Pul.