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QN7002 Dataheets PDF



Part Number QN7002
Manufacturers Renesas
Logo Renesas
Description N-CHANNEL MOSFET FOR SWITCHING
Datasheet QN7002 DatasheetQN7002 Datasheet (PDF)

QN7002 N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 Description The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features • Directly driven by a 4.5 V power source. • Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.2 Ω MAX. (VGS = 4.5 V, ID = 50 mA) Ordering Information Part Number Lead Plating Packing Package.

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QN7002 N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 Description The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features • Directly driven by a 4.5 V power source. • Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.2 Ω MAX. (VGS = 4.5 V, ID = 50 mA) Ordering Information Part Number Lead Plating Packing Package QN7002-T1B-AT Pure Sn 3000p/Reel SC-59 (Mini Mold) Remark "-AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Remark for Agent ORDER NUMBER “2SK4079(1)” must be used to order, instead of “QN7002”. For instance, “2SK4079(1)-T1B-AT” Absolute Maximum Ratings (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note Total Power Dissipation Channel Temperature Storage Temperature Note PW ≤ 10 μs, Duty Cycle ≤ 1% VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 60 ±20 200 ±800 200 150 −55 to +150 V V mA mA mW °C °C Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD ±400 V (MIL STD; C = 100 pF, R = 1.5 kΩ, 5 times), as reference value. R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 Page 1 of 6 QN7002 Electrical Characteristics (TA = 25°C) Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Body Diode Forward Voltage Note Note Pulsed Symbol Test Conditions IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf QG VF(S-D) VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μA VDS = 10 V, ID = 100 mA VGS = 10 V, ID = 100 mA VGS = 4.5 V, ID = 50 mA VDS = 10 V, VGS = 0 V, f = 1.0 MHz VDD = 10 V, ID = 200 mA, VGS = 10 V, RG = 10 Ω ID = 200 mA, VDD = 25 V, VGS = 10 V IF = 200 mA, VGS = 0 V Test Circuit Switching Time D.U.T. RG PG. VGS 0 τ τ = 1 μs Duty Cycle ≤ 1% RL VDD VGS VGS Wave Form 0 10% VDS 90% VDS VDS Wave Form 0 td(on) VGS 90% 90% 10% 10% tr td(off) tf ton toff Chapter Title MIN. TYP. MAX. UNIT 1 μA ±10 μA 1.0 2.5 V 150 mS 2.1 2.7 Ω 2.4 3.2 Ω 20 pF 9 pF 2 pF 16 ns 6.5 ns 82 ns 32 ns 2 nC 0.86 V R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 Page 2 of 6 dT - Percentage of Rated Power - % QN7002 Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TA – Ambient Temperature - °C ID - Drain Current - A 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 10 V 4.5 V Pulsed 246 VDS - Drain to Source Voltage - V 8 VGS(th) - Gate Threshold Voltage - V GATE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3 VDS = VGS ID = 250 μ A 2.5 2 1.5 1 -50 0 50 100 150 Tch - Channel Temperature - °C R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 | yfs | - Forward Transfer Admittance - S ID - Drain Current - A PT - Total Power Dissipation - W Chapter Title TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.2 0.1 0.0 0 25 50 75 100 125 150 175 TA – Ambient Temperature - °C FORWARD TRANSFER CHARACTERISTICS 1 VDS = 5 V Pulsed 0.1 0.01 0.001 TA = 125°C 75°C 25°C −25°C 0.0001 0 12345 VGS - Gate to Source Voltage – V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1 TA = −25°C 25°C 75°C 125°C 0.1 0.01 0.01 VDS = 10 V Pulsed 0.1 ID - Drain Current - A 1 Page 3 of 6 QN7002 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 Pulsed RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω 5 0 0.001 VGS = 4.5 V 10 V 0.01 0.1 1 ID - Drain Current - A 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 5 Pulsed 4 VGS = 4.5 V, ID = 50 mA 3 2 10 V, 100 mA 1 0 -25 0 25 50 75 100 125 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS 1000 tf VDD = 10 V, VGS = 10 V RG = 10 Ω 100 td(off) 10 td(on) tr 1 0.001 0.01 0.1 ID - Drain Current - A 1 td(on), tr, td(off), tf - Switching Time - ns R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 VGS – Gate to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - Ω Chapter Title DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 Pulsed 5 ID = 100 mA 50 mA 0 0 2 4 6 8 10 VGS – Gate to Source Voltage - V 12 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 10 1 VGS = 0 V f = 1.0 MHz 0.1 0.1 1 Ciss Coss Crss 10 100 VDS - Drain to Source Voltage – V DYNAMIC INPUT CHARACTERISTICS 10 8 VDD = 48 V 30 V 25 V 6 4 2 ID = 200 mA 0 0123 QG – Gate Chage - nC Page 4 of 6 IF – Diode Forward Current - A QN7002 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1 Pul.


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