FOR SWITCHING. QN7002 Datasheet

QN7002 SWITCHING. Datasheet pdf. Equivalent

Part QN7002
Description N-CHANNEL MOSFET FOR SWITCHING
Feature QN7002 N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 .
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QN7002 N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Shee QN7002 Datasheet
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QN7002
QN7002
N-CHANNEL MOSFET FOR SWITCHING
Preliminary Data Sheet
R07DS0269EJ0100
Rev.1.00
Mar 11, 2011
Description
The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.5 V power source.
Features
Directly driven by a 4.5 V power source.
Low on-state resistance
RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA)
RDS(on)2 = 3.2 Ω MAX. (VGS = 4.5 V, ID = 50 mA)
Ordering Information
Part Number
Lead Plating
Packing
Package
QN7002-T1B-AT
Pure Sn
3000p/Reel
SC-59 (Mini Mold)
Remark "-AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Remark for Agent
ORDER NUMBER “2SK4079(1)” must be used to order, instead of “QN7002”. For instance, “2SK4079(1)-T1B-AT”
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note
Total Power Dissipation
Channel Temperature
Storage Temperature
Note PW 10 μs, Duty Cycle 1%
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
60
±20
200
±800
200
150
55 to +150
V
V
mA
mA
mW
°C
°C
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD ±400 V (MIL STD; C = 100 pF, R = 1.5 kΩ, 5 times), as reference value.
R07DS0269EJ0100 Rev.1.00
Mar 11, 2011
Page 1 of 6



QN7002
QN7002
Electrical Characteristics (TA = 25°C)
Characteristics
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Body Diode Forward Voltage Note
Note Pulsed
Symbol
Test Conditions
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
VF(S-D)
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 10 V, ID = 100 mA
VGS = 10 V, ID = 100 mA
VGS = 4.5 V, ID = 50 mA
VDS = 10 V,
VGS = 0 V,
f = 1.0 MHz
VDD = 10 V,
ID = 200 mA,
VGS = 10 V,
RG = 10 Ω
ID = 200 mA, VDD = 25 V, VGS = 10 V
IF = 200 mA, VGS = 0 V
Test Circuit Switching Time
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
0 10%
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
Chapter Title
MIN. TYP. MAX. UNIT
1 μA
±10 μA
1.0 2.5 V
150 mS
2.1 2.7 Ω
2.4 3.2 Ω
20 pF
9 pF
2 pF
16 ns
6.5 ns
82 ns
32 ns
2 nC
0.86 V
R07DS0269EJ0100 Rev.1.00
Mar 11, 2011
Page 2 of 6





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