MOS FET. RJK0332DPB-01 Datasheet

RJK0332DPB-01 FET. Datasheet pdf. Equivalent

Part RJK0332DPB-01
Description Silicon N-Channel MOS FET
Feature RJK0332DPB-01 Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capa.
Manufacture Renesas
Datasheet
Download RJK0332DPB-01 Datasheet

RJK0332DPB-01 Silicon N Channel Power MOS FET Power Switchin RJK0332DPB-01 Datasheet
Recommendation Recommendation Datasheet RJK0332DPB-01 Datasheet




RJK0332DPB-01
RJK0332DPB-01
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 3.6 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
4
G
Preliminary Datasheet
R07DS0268EJ0500
(Previous: REJ03G1641-0400)
Rev.5.00
Mar 01, 2011
5
D
SSS
123
1, 2, 3 Source
4 Gate
5 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
20
35
140
35
15
22.5
45
2.78
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0268EJ0500 Rev.5.00
Mar 01, 2011
Page 1 of 6



RJK0332DPB-01
RJK0332DPB-01
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Body–drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Qrr
Min
30
1.2
Typ
3.6
5.0
70
2180
420
140
0.7
14
5.1
3.0
5.8
3.8
40
4.4
0.83
25
19
Max
0.1
1
2.5
4.7
7.0
1.08
Preliminary
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
nC
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = 20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 17.5 A, VGS = 10 V Note4
ID = 17.5 A, VGS = 4.5 V Note4
ID = 17.5 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 10 V, VGS = 4.5 V,
ID = 35 A
VGS = 10 V, ID = 17.5 A,
VDD 10 V, RL = 0.57 ,
Rg = 4.7
IF = 35 A, VGS = 0 Note4
IF = 35 A, VGS = 0
diF/ dt = 100 A/ s
R07DS0268EJ0500 Rev.5.00
Mar 01, 2011
Page 2 of 6





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)