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RJK0406JPE Dataheets PDF



Part Number RJK0406JPE
Manufacturers Renesas
Logo Renesas
Description Silicon N-Channel MOS FET
Datasheet RJK0406JPE DatasheetRJK0406JPE Datasheet (PDF)

RJK0406JPE Silicon N Channel MOS FET High Speed Power Switching Features  For Automotive application  AEC-Q101 compliant  Low on-resistance : RDS(on) = 1.65 m typ.  High current devices : ID = 160 A  Low input capacitance : Ciss = 6300 pF typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode .

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RJK0406JPE Silicon N Channel MOS FET High Speed Power Switching Features  For Automotive application  AEC-Q101 compliant  Low on-resistance : RDS(on) = 1.65 m typ.  High current devices : ID = 160 A  Low input capacitance : Ciss = 6300 pF typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tch = 25C, Rg  50  3. Tc = 25C 4. AEC-Q101 compliant Symbol VDSS VGSS I Note3 D ID (pulse) Note1 I Note3 DR IDR (pulse) Note1 I Note2 AP E Note2 AR Pch Note3 Tch Note4 Tstg Thermal Impedance Characteristics  Channel to case thermal impedance ch-c: 0.781C/W Preliminary Datasheet R07DS0335EJ0200 Rev.2.00 Dec 19, 2011 D 1. Gate 2. Drain 3. Source 4. Drain S Value 40 +20 / –5 160 640 160 640 70 653 192 175 –55 to +150 (Ta = 25C) Unit V V A A A A A mJ W C C R07DS0335EJ0200 Rev.2.00 Dec 19, 2011 Page 1 of 6 RJK0406JPE Electrical Characteristics Item Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test Preliminary Symbol IGSS IDSS VGS(off) RDS(on) Min — — 2.0 — Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr — — — — — — — — — — — — Typ — — — 1.65 6300 2200 1900 155 20 70 40 80 110 75 0.94 60 Max 10 1 3.5 2.0 — — — — — — — — — — 1.22 — Unit A A V m (Ta = 25C) Test Conditions VGS = +20/–5 V, VDS = 0 VDS = 40 V, VGS = 0 ID = 1 mA , VDS = 10 V ID = 80 A, VGS= 10 V Note5 pF VDS = 10 V, pF VGS = 0 pF f = 1 MHz nC VDD = 25 V, nC VGS = 10 V, nC ID = 80 A ns ID= 80 A, ns RL = 0.375, ns VGS = 10 V, ns RG = 4.7 V IF = 160 A, VGS = 0 Note5 ns IF = 80 A, VGS = 0, diF/dt = 100 A/s R07DS0335EJ0200 Rev.2.00 Dec 19, 2011 Page 2 of 6 Channel Dissipation Pch (W) RJK0406JPE Main Characteristics Power vs. Temperature Derating 200 150 100 50 0 50 100 150 200 Case Temperature Tc (°C) Drain Current ID (A) Typical Output Characteristics 200 10 V 8V 160 5V 120 VGS = 4.4 V 80 40 Tc = 25°C Pulse Test 0 5 10 Drain to Source Voltage VDS (V) Static Drain to Source On State Resistance vs. Gate to Source Voltage 10 ID = 80 A Pulse Test 8 6 Tc = 175°C 4 25°C 2 0 −40°C 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance RDS(on) (mΩ) Static Drain to Source On State Resistance RDS(on) (mΩ) Drain Current ID (A) Drain Current ID (A) Preliminary Maximum Safe Operation Area 1000 10 μs 100 μs 100 1 ms PW = 10 ms 10 Operation in this area is limited RDS(on) 1 DC Operation 0.1 Tc = 25°C 1 shot Pulse 0.01 0.1 1 10 100 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 1000 VDS = 10 V 100 Pulse Test 10 Tc = 175°C 1 25°C 0.1 0.01 −40°C 0.001 012 345 Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance vs. Drain Current 10 Tc = 25°C Pulse Test VGS = 8 V 10 V 1 0.1 1 10 100 Drain Current ID (A) 1000 R07DS0335EJ0200 Rev.2.00 Dec 19, 2011 Page 3 of 6 Static Drain to Source On State Resistance RDS(on) (mΩ) RJK0406JPE Static Drain to Source On State Resistance vs. Temperature 5 Pulse Test ID = 80 A 4 3 VGS = 8 V 2 10 V 1 0 −50 0 50 100 150 200 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 50 Tc = 25°C ID = 80 A 40 VDD = 25 V 10 V 30 VDS 5V VGS 20 16 12 20 8 10 VDD = 25 V 4 10 V 5V 0 0 50 100 150 200 250 Gate Charge Qg (nC) Avalanche Energy vs. Channel Temperature Derating 1000 800 600 IAP = 70 A VDD = 25 V duty < 0.1 % Rg ≥ 50 Ω 400 200 0 25 50 75 100 125 150 175 Channel Temperature Tch (°C) Repetitive Avalanche Energy EAR (mJ) Gate to Source Voltage VGS (V) Reverse Drain Current IDR (A) Capacitance C (pF) Preliminary Typical Capacitance vs. Drain to Source Voltage 100000 Tc = 25°C VGS = 0 f = 1 MHz 10000 Ciss 1000 Coss Crss 100 0 5 10 15 20 25 30 Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage 200 160 10 V Tc = 25°C Pulse Test 120 80 VGS = 0, −5 V 40 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0335EJ0200 Rev.2.00 Dec 19, 2011 Page 4 of 6 RJK0406JPE Normalized Transient Thermal Impedance vs. Pulse Width 10 Preliminary Normalized Transient Thermal Impedance γs (t) Vin 15 V 1 D=1 0.5 0.2 0.1 0.1 0.05 0.01 1shot pulse 0.02 0.01 10 μ 100 μ 1m θch – c(t) = γs (t) • θch – c θch – c = 0.781°C/W, Tc = 25°C PDM D = PW T PW T 10 m 100 m 1 10 Pulse Width PW (s) .


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