Document
RJK0406JPE
Silicon N Channel MOS FET High Speed Power Switching
Features
For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 1.65 m typ. High current devices : ID = 160 A Low input capacitance : Ciss = 6300 pF typ
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Tch = 25C, Rg 50 3. Tc = 25C 4. AEC-Q101 compliant
Symbol
VDSS
VGSS I Note3
D
ID (pulse) Note1 I Note3
DR
IDR (pulse) Note1 I Note2
AP
E Note2
AR
Pch Note3 Tch Note4
Tstg
Thermal Impedance Characteristics
Channel to case thermal impedance ch-c: 0.781C/W
Preliminary Datasheet
R07DS0335EJ0200 Rev.2.00
Dec 19, 2011
D
1. Gate 2. Drain 3. Source 4. Drain
S
Value 40
+20 / –5 160 640 160 640 70 653 192 175
–55 to +150
(Ta = 25C)
Unit V V A A A A A mJ W C C
R07DS0335EJ0200 Rev.2.00 Dec 19, 2011
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RJK0406JPE
Electrical Characteristics
Item Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test
Preliminary
Symbol IGSS IDSS
VGS(off) RDS(on)
Min — — 2.0 —
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf VDF trr
— — — — — — — — — — — —
Typ — — — 1.65
6300 2200 1900 155
20 70 40 80 110 75 0.94 60
Max 10
1 3.5 2.0
— — — — — — — — — — 1.22 —
Unit A A V m
(Ta = 25C)
Test Conditions VGS = +20/–5 V, VDS = 0 VDS = 40 V, VGS = 0 ID = 1 mA , VDS = 10 V ID = 80 A, VGS= 10 V Note5
pF VDS = 10 V, pF VGS = 0 pF f = 1 MHz
nC VDD = 25 V, nC VGS = 10 V, nC ID = 80 A
ns ID= 80 A, ns RL = 0.375, ns VGS = 10 V, ns RG = 4.7 V IF = 160 A, VGS = 0 Note5
ns IF = 80 A, VGS = 0, diF/dt = 100 A/s
R07DS0335EJ0200 Rev.2.00 Dec 19, 2011
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Channel Dissipation Pch (W)
RJK0406JPE
Main Characteristics
Power vs. Temperature Derating 200
150
100
50
0 50 100 150 200 Case Temperature Tc (°C)
Drain Current ID (A)
Typical Output Characteristics
200 10 V
8V 160
5V
120
VGS = 4.4 V
80
40 Tc = 25°C Pulse Test
0 5 10
Drain to Source Voltage VDS (V)
Static Drain to Source On State Resistance vs. Gate to Source Voltage
10 ID = 80 A Pulse Test
8
6
Tc = 175°C 4 25°C
2
0 −40°C 0 4 8 12 16 20 Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance RDS(on) (mΩ)
Static Drain to Source On State Resistance RDS(on) (mΩ)
Drain Current ID (A)
Drain Current ID (A)
Preliminary
Maximum Safe Operation Area 1000
10
μs 100
μs
100
1
ms
PW
= 10 ms
10 Operation
in this area
is limited RDS(on) 1
DC Operation
0.1
Tc = 25°C 1 shot Pulse 0.01 0.1 1
10 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
1000 VDS = 10 V
100 Pulse Test
10 Tc = 175°C
1
25°C 0.1
0.01
−40°C
0.001 012 345
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance vs. Drain Current
10 Tc = 25°C Pulse Test
VGS = 8 V
10 V 1
0.1 1
10 100 Drain Current ID (A)
1000
R07DS0335EJ0200 Rev.2.00 Dec 19, 2011
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Static Drain to Source On State Resistance RDS(on) (mΩ)
RJK0406JPE
Static Drain to Source On State Resistance vs. Temperature
5 Pulse Test ID = 80 A
4
3 VGS = 8 V
2 10 V
1
0 −50 0 50 100 150 200
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
50 Tc = 25°C
ID = 80 A
40 VDD = 25 V 10 V
30 VDS
5V
VGS
20 16 12
20 8
10
VDD = 25 V
4
10 V
5V 0
0 50 100 150 200 250
Gate Charge Qg (nC)
Avalanche Energy vs. Channel Temperature Derating
1000 800 600
IAP = 70 A VDD = 25 V duty < 0.1 %
Rg ≥ 50 Ω
400
200
0 25 50 75 100 125 150 175
Channel Temperature Tch (°C)
Repetitive Avalanche Energy EAR (mJ)
Gate to Source Voltage VGS (V) Reverse Drain Current IDR (A)
Capacitance C (pF)
Preliminary
Typical Capacitance vs. Drain to Source Voltage
100000
Tc = 25°C
VGS = 0 f = 1 MHz
10000
Ciss
1000
Coss Crss
100 0 5 10 15 20 25 30
Drain to Source Voltage VDS (V)
Reverse Drain Current vs. Source to Drain Voltage
200
160 10 V
Tc = 25°C Pulse Test
120
80 VGS = 0, −5 V 40
0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V)
R07DS0335EJ0200 Rev.2.00 Dec 19, 2011
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RJK0406JPE
Normalized Transient Thermal Impedance vs. Pulse Width 10
Preliminary
Normalized Transient Thermal Impedance γs (t)
Vin 15 V
1 D=1
0.5
0.2
0.1
0.1 0.05
0.01
1shot pulse
0.02
0.01 10 μ
100 μ
1m
θch – c(t) = γs (t) • θch – c θch – c = 0.781°C/W, Tc = 25°C
PDM
D
=
PW T
PW
T
10 m
100 m
1
10
Pulse Width PW (s)
.