MOS FET. RJK0406JPE Datasheet

RJK0406JPE FET. Datasheet pdf. Equivalent

Part RJK0406JPE
Description Silicon N-Channel MOS FET
Feature RJK0406JPE Silicon N Channel MOS FET High Speed Power Switching Features  For Automotive applicatio.
Manufacture Renesas
Datasheet
Download RJK0406JPE Datasheet

RJK0406JPE Silicon N Channel MOS FET High Speed Power Switch RJK0406JPE Datasheet
Recommendation Recommendation Datasheet RJK0406JPE Datasheet




RJK0406JPE
RJK0406JPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
For Automotive application
AEC-Q101 compliant
Low on-resistance : RDS(on) = 1.65 mtyp.
High current devices : ID = 160 A
Low input capacitance : Ciss = 6300 pF typ
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tch = 25C, Rg 50
3. Tc = 25C
4. AEC-Q101 compliant
Symbol
VDSS
VGSS
I Note3
D
ID (pulse) Note1
I Note3
DR
IDR (pulse) Note1
I Note2
AP
E Note2
AR
Pch Note3
Tch Note4
Tstg
Thermal Impedance Characteristics
Channel to case thermal impedance ch-c: 0.781C/W
Preliminary Datasheet
R07DS0335EJ0200
Rev.2.00
Dec 19, 2011
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
40
+20 / –5
160
640
160
640
70
653
192
175
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
mJ
W
C
C
R07DS0335EJ0200 Rev.2.00
Dec 19, 2011
Page 1 of 6



RJK0406JPE
RJK0406JPE
Electrical Characteristics
Item
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note: 5. Pulse test
Preliminary
Symbol
IGSS
IDSS
VGS(off)
RDS(on)
Min
2.0
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Typ
1.65
6300
2200
1900
155
20
70
40
80
110
75
0.94
60
Max
10
1
3.5
2.0
1.22
Unit
A
A
V
m
(Ta = 25C)
Test Conditions
VGS = +20/–5 V, VDS = 0
VDS = 40 V, VGS = 0
ID = 1 mA , VDS = 10 V
ID = 80 A, VGS= 10 V Note5
pF VDS = 10 V,
pF VGS = 0
pF f = 1 MHz
nC VDD = 25 V,
nC VGS = 10 V,
nC ID = 80 A
ns ID= 80 A,
ns RL = 0.375,
ns VGS = 10 V,
ns RG = 4.7
V IF = 160 A, VGS = 0 Note5
ns IF = 80 A, VGS = 0,
diF/dt = 100 A/s
R07DS0335EJ0200 Rev.2.00
Dec 19, 2011
Page 2 of 6





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