MOS FET. RJK0630JPE Datasheet

RJK0630JPE FET. Datasheet pdf. Equivalent

Part RJK0630JPE
Description Silicon N-Channel MOS FET
Feature RJK0630JPE Silicon N Channel MOS FET High Speed Power Switching Features • For Automotive applicatio.
Manufacture Renesas
Datasheet
Download RJK0630JPE Datasheet

RJK0630JPE Silicon N Channel MOS FET High Speed Power Switch RJK0630JPE Datasheet
Recommendation Recommendation Datasheet RJK0630JPE Datasheet




RJK0630JPE
RJK0630JPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
For Automotive application
AEC-Q101 compliant
Low on-resistance : RDS(on) = 6.2 mΩ typ.
Capable of 4.5 V gate drive
Low input capacitance : Ciss = 2100 pF typ.
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
1G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 μs, duty cycle 1%
2. Tch = 25°C, Rg 50 Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
I Note2
AP
E Note2
AR
Pch Note3
Tch Note4
Tstg
Thermal Impedance Characteristics
Channel to case thermal impedance θch-c: 1.76°C/W
Preliminary Datasheet
R07DS0340EJ0100
Rev.1.00
Apr 18, 2011
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Value
60
±20
75
300
75
300
35
105
85
175
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
R07DS0340EJ0100 Rev.1.00
Apr 18, 2011
Page 1 of 6



RJK0630JPE
RJK0630JPE
Electrical Characteristics
Item
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note: 5. Pulse test
Preliminary
Symbol
IGSS
IDSS
VGS(off)
RDS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
1.0
Typ
6.2
8.5
2100
550
420
49
7
15
16
17
65
18
0.94
45
Max
±10
1
2.0
7.5
11.5
Unit
μA
μA
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
VGS = ±20 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 38 A, VGS= 10 V Note5
ID = 38 A, VGS= 4.5 V Note5
VDS = 10 V, VGS = 0
f = 1 MHz
VDD = 10 V, VGS = 10 V,
ID = 75 A
ID= 38 A, RL = 2.0 Ω,
VGS = 10 V, RG = 4.7 Ω
IF = 75 A, VGS = 0 Note5
IF = 75 A, VGS = 0,
diF/dt = 100 A/μs
R07DS0340EJ0100 Rev.1.00
Apr 18, 2011
Page 2 of 6





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