Power MOSFET. NCE3060G Datasheet

NCE3060G MOSFET. Datasheet pdf. Equivalent

Part NCE3060G
Description N-Channel Enhancement Mode Power MOSFET
Feature http://www.ncepower.com Pb Free Product NCE3060G NCE N-Channel Enhancement Mode Power MOSFET Desc.
Manufacture NCE Power Semiconductor
Datasheet
Download NCE3060G Datasheet

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NCE3060G
http://www.ncepower.com
Pb Free Product
NCE3060G
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3060G uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =30V,ID =60A
RDS(ON) <4.0 m@ VGS=10V
RDS(ON) <5.5 m@ VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Schematic diagram
DFN5X6-8L top view
Package Marking and Ordering Information
Device Marking
NCE3060G
Device
NCE3060G
Device Package
DFN5X6-8L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
ID (100)
IDM
PD
TJ,TSTG
Limit
30
±20
60
47
200
60
0.5
-55 To 150
Unit
V
V
A
A
A
W
W/
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
2.0 /W
Wuxi NCE Power r Co., Ltd
Page 1
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NCE3060G
http://www.ncepower.com
Pb Free Product
NCE3060G
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Symbol
Condition
Min Typ Max Unit
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
VGS=±20V,VDS=0V
30 35
-
--
1
- - ±100
V
μA
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
VDS=5V,ID=20A
1.2 1.5
- 3.2
3.4
- 70
2.0
4.0
5.5
-
V
m
S
Clss
Coss
VDS=15V,VGS=0V,
F=1.0MHz
- 2850
- 407
-
-
PF
PF
Crss
- 327
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=15V, RL=15
VGS=10V,RG=2.5
VDS=15V,ID=20A,
VGS=10V
- 11
- 13
- 42
- 14
- 69
- 7.4
- 16.4
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=20A
-
1.2 V
IS
--
60
A
trr
TJ = 25°C, IF = 20A
- 26
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 34
-
nC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Test circuit
1) EAS Test Circuit
Wuxi NCE Power r Co., Ltd
Page 2
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