Rectifier Diodes. P1200B Datasheet

P1200B Diodes. Datasheet pdf. Equivalent


Part P1200B
Description Silicon Rectifier Diodes
Feature 62.5 ±0.5 7,5 ±0.1 P1200A ... P1200G Version 2012-10-01 Ø 8 ±0.1 Type Ø 1.2 ±0.05 Dimensions - Maße.
Manufacture Diotec
Datasheet
Download P1200B Datasheet

62.5 ±0.5 7,5 ±0.1 P1200A ... P1200G Version 2012-10-01 Ø 8 P1200B Datasheet
P 1200 A ... P 1200 S Axial lead diode Standard silicon rec P1200B Datasheet
Recommendation Recommendation Datasheet P1200B Datasheet




P1200B
P1200A ... P1200G
Version 2012-10-01
Ø 8 ±0.1
Type
Ø 1.2 ±0.05
Dimensions - Maße [mm]
P1200A ... P1200G
Silicon Rectifier Diodes
Silizium-Gleichrichterdioden
Nominal Current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
12 A
50...400 V
Ø 8 x 7.5 [mm]
P600 Style
1.3 g
Maximum ratings
Type
Typ
P1200A
P1200B
P1200D
P1200G
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
400
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
50
100
200
400
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
at reduced reverse voltage
bei reduzierter Sperrspannung
Storage temperature – Lagerungstemperatur
TA = 50°C
f > 15 Hz
TA = 25°C
TA = 25°C
IFAV
IFRM
IFSM
i2t
VR ≤ 80% VRRM
VR ≤ 20% VRRM
Tj
Tj
TS
12 A 1)
80 A 1)
400/450 A
800 A2s
-50...+150°C
-50...+200°C
-50...+175°C
1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1



P1200B
Characteristics
Forward Voltage – Durchlass-Spannung
Tj = 25°C
Tj = 25°C
Leakage current – Sperrstrom
Tj = 25°C
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to leads
Wärmewiderstand Sperrschicht – Anschlussdraht
IF = 5 A
IF = 12 A
VR = VRRM
VF
VF
IR
RthA
RthL
P1200A ... P1200G
Kennwerte
< 0.84 V
< 0.95 V
< 10 µA
< 10 K/W 1)
< 2 K/W
120
[%]
100
80
Vr < 20% Vrrm
60
40
Vr < 80% Vrrm
20
IFAV
0
0 TA 50 100 150 [°C]
Rated forward current versus ambient temperature1)
Zul. Richtstrom in Abh. von der Umgebungstemp.1)
103
[A]
102 Tj = 125°C
10 Tj = 25°C
1
IF
10-1
400a-(5a-0,8v)
0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)