Document
Certificate TH97/10561QM
Certificate TW00/17276EM
SD101AWS - SD101CWS
SCHOTTKY BARRIER DIODES
0.40 0.15 (max)
0.25
FEATURES :
* For general purpose applications * The SD101 series is a metal-on-silicon
Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * These diodes are also available in the MiniMELF case with type designations LL101A thru LL101C. * Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-323 plastic Case * Weight : approx. 0.004 g * SD101AWS Marking Code : SJ * SD101BWS Marking Code : SK * SD101CWS Marking Code : SL
1.10 0.80
1.35 1.15
SOD-323
1.80 1.60
2.80 2.30
Dimensions in millimeters
Maximum Ratings and Thermal Characteristics (TC = 25 °C unless otherwise noted)
Parameter
Repetitive Peak Reverse Voltage
Maximum Single Cycle Surge 10 µs Square Wave Power Dissipation (Infinite Heat Sink) Thermal Resistance Junction to Ambient Air Junction Temperature Storage temperature range
SD101AWS SD101BWS SD101CWS
Symbol
VRRM
IFSM Ptot RӨJA TJ TSTG
Value
60 50 40 2 150(1) 650(1) 125(1) -55 to + 150
Unit
V
A mW °C/W °C °C
Electrical Characteristics (TJ = 25 °C unless otherwise noted)
Parameter
Reverse Breakdown Voltage Reverse Current
Forward Voltage Drop
Junction Capacitance Reverse Recovery Time
SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS
Symbol
V(BR)R IR
VF
Ctot Trr
Test Condition IR = 10 μA VR = 50 V VR = 40 V VR = 30 V IF = 1mA
IF = 15mA
VR = 0 V, f = 1 MHz IF = IR = 5mA , recover to 0.1IR
Note: (1) Valid provided that electrodes are kept at ambient temperature.
Min Typ Max Unit
60 -
-
50 - - V
40 -
-
- - 200
- - 200 nA
- - 200
- - 0.41
- - 0.40
-
-
0.39 1.00
V
- - 0.95
- - 0.90
- - 2.0 - - 2.1 pF
- - 2.2
- - 1 ns
Page 1 of 2
Rev. 01 : May 4, 2006
Forward Current , IF (mA)
Certificate TH97/10561QM
Certificate TW00/17276EM
RATING AND CHARACTERISTIC CURVES (SD101AWS - SD101CWS)
Typical variation of forward current vs. forward voltage for primary conduction through the schottky barrier 10 5 SD101CWS
2 SD101BWS
1
SD101AWS
0.5
0.2
0.1 0.05
0.02
0.01 0
0.5 1 Forward Voltage , VF (V)
Typical capacitance curve as a function of reverse Voltage
2 Tj = 25°C
SD101BWS
SD101CWS
1
SD101AWS
0
0
10 20
30 40 50
Reverse Voltage , VR (V)
Reverse Current , IR (μA)
Forward Current , IF (mA)
Typical forward conduction curve of combination Schottky barrier and PN junction guard ring 100
SD101AWS SD101BWS
80
SD101CWS
60
40
20
0 0 0.5 1 Forward Voltage , VF (V)
Typical variation of reverse current at various temperatures
100 50
20 10 5
2 1 0.5
0.2
0.1 0.05
0.02 0.01
0
Ta = 125 °C Ta = 100 °C
Ta = 25 °C
10 20 30 40 50
Reverse Voltage , VR (V)
Typical Capacitance , CT (pF)
Page 2 of 2
Rev. 01 : May 4, 2006
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