BARRIER DIODES. SD101CWS Datasheet

SD101CWS DIODES. Datasheet pdf. Equivalent


Part SD101CWS
Description SCHOTTKY BARRIER DIODES
Feature Certificate TH97/10561QM Certificate TW00/17276EM SD101AWS - SD101CWS SCHOTTKY BARRIER DIODES 0..
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SD101CWS
Certificate TH97/10561QM
Certificate TW00/17276EM
SD101AWS - SD101CWS
SCHOTTKY BARRIER DIODES
FEATURES :
* For general purpose applications
* The SD101 series is a metal-on-silicon
Schottky barrier device which is
protected by a PN junction guard ring.
* The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
* These diodes are also available in the MiniMELF case
with type designations LL101A thru LL101C.
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-323 plastic Case
* Weight : approx. 0.004 g
* SD101AWS Marking Code : SJ
* SD101BWS Marking Code : SK
* SD101CWS Marking Code : SL
SOD-323
1.80
1.60
2.80
2.30
Dimensions in millimeters
Maximum Ratings and Thermal Characteristics (TC = 25 °C unless otherwise noted)
Parameter
Repetitive Peak Reverse Voltage
Maximum Single Cycle Surge 10 µs Square Wave
Power Dissipation (Infinite Heat Sink)
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
SD101AWS
SD101BWS
SD101CWS
Symbol
VRRM
IFSM
Ptot
RӨJA
TJ
TSTG
Value
60
50
40
2
150(1)
650(1)
125(1)
-55 to + 150
Unit
V
A
mW
°C/W
°C
°C
Electrical Characteristics (TJ = 25 °C unless otherwise noted)
Parameter
Reverse Breakdown Voltage
Reverse Current
Forward Voltage Drop
Junction Capacitance
Reverse Recovery Time
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
Symbol
V(BR)R
IR
VF
Ctot
Trr
Test Condition
IR = 10 μA
VR = 50 V
VR = 40 V
VR = 30 V
IF = 1mA
IF = 15mA
VR = 0 V, f = 1 MHz
IF = IR = 5mA ,
recover to 0.1IR
Note: (1) Valid provided that electrodes are kept at ambient temperature.
Min Typ Max Unit
60 -
-
50 - - V
40 -
-
- - 200
- - 200 nA
- - 200
- - 0.41
- - 0.40
-
-
-
-
0.39
1.00
V
- - 0.95
- - 0.90
- - 2.0
- - 2.1 pF
- - 2.2
- - 1 ns
Page 1 of 2
Rev. 01 : May 4, 2006



SD101CWS
Certificate TH97/10561QM
Certificate TW00/17276EM
RATING AND CHARACTERISTIC CURVES (SD101AWS - SD101CWS)
Typical variation of forward current
vs. forward voltage for primary conduction
through the schottky barrier
10
5 SD101CWS
2 SD101BWS
1
SD101AWS
0.5
0.2
0.1
0.05
0.02
0.01
0
0.5 1
Forward Voltage , VF (V)
Typical capacitance curve as a
function of reverse Voltage
2
Tj = 25°C
SD101BWS
SD101CWS
1
SD101AWS
0
0
10 20
30 40 50
Reverse Voltage , VR (V)
Typical forward conduction curve
of combination Schottky barrier
and PN junction guard ring
100
SD101AWS
SD101BWS
80
SD101CWS
60
40
20
0
0 0.5 1
Forward Voltage , VF (V)
Typical variation of reverse current
at various temperatures
100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0
Ta = 125 °C
Ta = 100 °C
Ta = 25 °C
10 20 30 40 50
Reverse Voltage , VR (V)
Page 2 of 2
Rev. 01 : May 4, 2006







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