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SD101CWS Dataheets PDF



Part Number SD101CWS
Manufacturers EIC
Logo EIC
Description SCHOTTKY BARRIER DIODES
Datasheet SD101CWS DatasheetSD101CWS Datasheet (PDF)

Certificate TH97/10561QM Certificate TW00/17276EM SD101AWS - SD101CWS SCHOTTKY BARRIER DIODES 0.40 0.15 (max) 0.25 FEATURES : * For general purpose applications * The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * These diodes are also available i.

  SD101CWS   SD101CWS



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Certificate TH97/10561QM Certificate TW00/17276EM SD101AWS - SD101CWS SCHOTTKY BARRIER DIODES 0.40 0.15 (max) 0.25 FEATURES : * For general purpose applications * The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * These diodes are also available in the MiniMELF case with type designations LL101A thru LL101C. * Pb / RoHS Free MECHANICAL DATA : * Case : SOD-323 plastic Case * Weight : approx. 0.004 g * SD101AWS Marking Code : SJ * SD101BWS Marking Code : SK * SD101CWS Marking Code : SL 1.10 0.80 1.35 1.15 SOD-323 1.80 1.60 2.80 2.30 Dimensions in millimeters Maximum Ratings and Thermal Characteristics (TC = 25 °C unless otherwise noted) Parameter Repetitive Peak Reverse Voltage Maximum Single Cycle Surge 10 µs Square Wave Power Dissipation (Infinite Heat Sink) Thermal Resistance Junction to Ambient Air Junction Temperature Storage temperature range SD101AWS SD101BWS SD101CWS Symbol VRRM IFSM Ptot RӨJA TJ TSTG Value 60 50 40 2 150(1) 650(1) 125(1) -55 to + 150 Unit V A mW °C/W °C °C Electrical Characteristics (TJ = 25 °C unless otherwise noted) Parameter Reverse Breakdown Voltage Reverse Current Forward Voltage Drop Junction Capacitance Reverse Recovery Time SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS Symbol V(BR)R IR VF Ctot Trr Test Condition IR = 10 μA VR = 50 V VR = 40 V VR = 30 V IF = 1mA IF = 15mA VR = 0 V, f = 1 MHz IF = IR = 5mA , recover to 0.1IR Note: (1) Valid provided that electrodes are kept at ambient temperature. Min Typ Max Unit 60 - - 50 - - V 40 - - - - 200 - - 200 nA - - 200 - - 0.41 - - 0.40 - - 0.39 1.00 V - - 0.95 - - 0.90 - - 2.0 - - 2.1 pF - - 2.2 - - 1 ns Page 1 of 2 Rev. 01 : May 4, 2006 Forward Current , IF (mA) Certificate TH97/10561QM Certificate TW00/17276EM RATING AND CHARACTERISTIC CURVES (SD101AWS - SD101CWS) Typical variation of forward current vs. forward voltage for primary conduction through the schottky barrier 10 5 SD101CWS 2 SD101BWS 1 SD101AWS 0.5 0.2 0.1 0.05 0.02 0.01 0 0.5 1 Forward Voltage , VF (V) Typical capacitance curve as a function of reverse Voltage 2 Tj = 25°C SD101BWS SD101CWS 1 SD101AWS 0 0 10 20 30 40 50 Reverse Voltage , VR (V) Reverse Current , IR (μA) Forward Current , IF (mA) Typical forward conduction curve of combination Schottky barrier and PN junction guard ring 100 SD101AWS SD101BWS 80 SD101CWS 60 40 20 0 0 0.5 1 Forward Voltage , VF (V) Typical variation of reverse current at various temperatures 100 50 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 Ta = 125 °C Ta = 100 °C Ta = 25 °C 10 20 30 40 50 Reverse Voltage , VR (V) Typical Capacitance , CT (pF) Page 2 of 2 Rev. 01 : May 4, 2006 .


SD101BWS SD101CWS SD101AWS


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