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SD101CW

Galaxy Semi-Conductor

Schottky Barrier Diode

BL Galaxy Central Micro-electrical Production specification Schottky Barrier Diode SD101AW/SD101BW/SD101CW FEATURES ...


Galaxy Semi-Conductor

SD101CW

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BL Galaxy Central Micro-electrical Production specification Schottky Barrier Diode SD101AW/SD101BW/SD101CW FEATURES z Low Forward Voltage Drop. z Guard Ring Construction For Transient Protection. z Negligible Reverse Recovery Time. Pb Lead-free APPLICATIONS z Schotty barrier switching. SOD-123 ORDERING INFORMATION Type No. Marking SD101AW SD101BW SD101CW S1 S2 S3 Package Code SOD-123 SOD-123 SOD-123 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol SD101AW SD101BW SD101CW Unit Peak Repetitive Peak reverse voltage VRR Working Peak DC Reverse Voltage VRWM 60 50 40 V VR RMS Reverse Voltage VR(RMS) 42 35 28 V Forward Continuous Current IFM 15 mA Repetitive Peak Forward Current @t<1.0s @t=10μs IFRM 50 2.0 mA A Power Dissipation Thermal Resistance Junction to Ambient Storage temperature Pd RθjA Tstg 400 300 -65~+125 mW ℃/W ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSKA013 Rev.A www.galaxycn.com 1 BL Galaxy Central Micro-electrical Production specification Schottky Barrier Diode SD101AW/SD101BW/SD101CW Parameter Symbol Min. Typ. Reverse Breakdown Voltage SD101AW 60 SD101BW SD101CW V(BR)R 50 40 Forward voltage SD101AW SD101BW SD101CW SD101AW VF SD101BW SD101CW Reverse current SD101AW SD101BW SD101CW IRM Capacitance between terminals SD101AW SD101BW CT SD101CW Reverse Recovery Time trr Max. Unit V 0.41 0.40 0.39 1.00 V 0.95 0.90 0.2 μA 2.0 2.1 ...




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