Barrier Diode. SD101CW Datasheet

SD101CW Diode. Datasheet pdf. Equivalent


Part SD101CW
Description Schottky Barrier Diode
Feature BL Galaxy Central Micro-electrical Production specification Schottky Barrier Diode SD101AW/SD101B.
Manufacture Galaxy Semi-Conductor
Datasheet
Download SD101CW Datasheet


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SD101CW
BL Galaxy Central Micro-electrical
Production specification
Schottky Barrier Diode
SD101AW/SD101BW/SD101CW
FEATURES
z Low Forward Voltage Drop.
z Guard Ring Construction For Transient
Protection.
z Negligible Reverse Recovery Time.
Pb
Lead-free
APPLICATIONS
z Schotty barrier switching.
SOD-123
ORDERING INFORMATION
Type No.
Marking
SD101AW
SD101BW
SD101CW
S1
S2
S3
Package Code
SOD-123
SOD-123
SOD-123
MAXIMUM RATING @ Ta=25unless otherwise specified
Parameter
Symbol SD101AW SD101BW SD101CW Unit
Peak Repetitive Peak reverse voltage
VRR
Working Peak
DC Reverse Voltage
VRWM
60
50
40
V
VR
RMS Reverse Voltage
VR(RMS)
42
35
28
V
Forward Continuous Current
IFM 15
mA
Repetitive Peak Forward Current @t<1.0s
@t=10μs IFRM
50
2.0
mA
A
Power Dissipation
Thermal Resistance Junction to Ambient
Storage temperature
Pd
RθjA
Tstg
400
300
-65~+125
mW
/W
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Document number: BL/SSSKA013
Rev.A
www.galaxycn.com
1



SD101CW
BL Galaxy Central Micro-electrical
Production specification
Schottky Barrier Diode
SD101AW/SD101BW/SD101CW
Parameter
Symbol Min. Typ.
Reverse Breakdown Voltage SD101AW
60
SD101BW
SD101CW
V(BR)R
50
40
Forward voltage
SD101AW
SD101BW
SD101CW
SD101AW
VF
SD101BW
SD101CW
Reverse current
SD101AW
SD101BW
SD101CW
IRM
Capacitance between terminals SD101AW
SD101BW CT
SD101CW
Reverse Recovery Time
trr
Max. Unit
V
0.41
0.40
0.39
1.00
V
0.95
0.90
0.2 μA
2.0
2.1 pF
2.2
1.0 ns
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Conditions
IR=10μA
IR=10μA
IR=10μA
IF=1.0mA
IF=1.0mA
IF=1.0mA
IF=15mA
IF=15mA
IF=15mA
VR=50V
VR=40V
VR=30V
VR=0,f=1MHz
IR=IF=5mA
Irr=0.1*IR,RL=100
Document number: BL/SSSKA013
Rev.A
www.galaxycn.com
2







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