Barrier Diode. SDB310WAF Datasheet

SDB310WAF Diode. Datasheet pdf. Equivalent


Part SDB310WAF
Description General Purpose Schottky Barrier Diode
Feature SDB310WAF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These .
Manufacture KODENSHI
Datasheet
Download SDB310WAF Datasheet


Semiconductor Features • Low power rectified • Silicon epit SDB310WAF Datasheet
SDB310WAF SCHOTTKY BARRIER DIODE General Purpose Schottky B SDB310WAF Datasheet
Recommendation Recommendation Datasheet SDB310WAF Datasheet




SDB310WAF
SDB310WAF
SCHOTTKY BARRIER DIODE
General Purpose Schottky Barrier Diode
General Description
These Schottky barrier diodes are designed for high-speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conductions. Miniature
surface mount package is excellent for hand-held and portable
applications where space is limited.
Features and Benefits
Low forward drop voltage and low leakage current
Very low switching time
Full lead (Pb)-free device and RoHS compliant device
Available in “Green” device
SOT-23F
Applications
General purpose and high speed switching
Protection circuit and voltage clamping
Ordering Information
Part Number
Marking Code
Package
Packaging
SDB310WAF
DB2
SOT-23F
Tape & Reel
Marking Information
DB2
DB2 = Specific Device Code
= Year & Week Code Marking
Pinning Information
Pin Description
1 Cathode (Diode 1)
2 Cathode (Diode 2)
3 Common Anode
Simplified Outline
Rev. date: 25-AUG-10
KSD-D5C040-001
Graphic Symbol
www.auk.co.kr
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SDB310WAF
Absolute Maximum Ratings (Tamb=25, Unless otherwise specified)
Characteristic
Symbol
Peak reverse voltage
DC reverse voltage
Repetitive peak forward current
Forward current
Non-repetitive peak forward surge current(t=10ms)
Power dissipation 1)
1) Device mounted on FR-4 board with recommended pad layout.
VRM
VR
IFRM
IF
IFSM
PD
SDB310WAF
Ratings
40
30
0.5
0.2
2
150
Unit
V
V
A
A
A
mW
Thermal Characteristics (Tamb=25, Unless otherwise specified)
Characteristic
Symbol
Thermal resistance, junction to ambient 1)
Operating junction temperature
Storage temperature range
1) Device mounted on FR-4 board with recommended pad layout.
Rth(j-a)
Tj
Tstg
Ratings
833
150
-55 ~ 150
Unit
C/W
C
C
Electrical Characteristics (Tamb=25, Unless otherwise specified)
Characteristic
Symbol
Test Condition
Forward voltage 2)
Reverse leakage current 3)
Total capacitance
Reverse recovery time
VF(1)
VF(2)
IR
CT
trr
IF=10mA
IF=30mA
VR=30V
VR=1V, f=1MHz
IF= IR=10mA, IR(REC)= 1mA
2) Pulse test: tP≤380, Duty cycle≤2%
3) Pulse test: tP≤5㎳, Duty cycle≤2%
Min. Typ. Max.
- - 0.4
- - 0.5
-- 1
- - 10
-- 5
Unit
V
V
A
pF
ns
Rev. date: 25-AUG-10
KSD-D5C040-001
www.auk.co.kr
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