Semiconductor
Features
• Low power rectified • Silicon epitaxial type • High reliability
Ordering Information
Type No...
Semiconductor
Features
Low power rectified Silicon epitaxial type High reliability
Ordering Information
Type No.
Marking
SDB310WK
DB8
Outline Dimensions
SDB310WK
Schottky Barrier Diode
Package Code SOT-23
unit : mm
1.90 Typ.
2.4±0.1 1.30±0.1
1 3
2
0.45~0.60
2.9±0.1
3
0.4 Typ.
0.2 Min.
12
PIN Connections 1. Anode 2. Anode 3. Cathode, Cathode
-0.03 +0.05
1.12 Max. 0.38
0~0.1
0.124
KSD-2035-000
1
SDB310WK
Absolute maximum ratings
Characteristic
Symbol
Ratings
Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature * : δ = D/T =0.33
(T<1S)
VR IFRM*
IF IFSM PD Tj Tstg
30 0.5 0.2 2 150 150 -55 ~ 150
* : Unit ratings. Total rating=Unit rating× 1.5
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Forward voltage 1 Forward voltage 2 Reverse current Total capacitance Reverse recovery time
VF(1) VF(2)
IR CT trr
IF=10mA
IF=30mA VR=30V VR=1V, f=1MHz
IF= IR=10mA, IRR= 1mA, RL=100Ω
-
Typ.
-
Ta=25°C Unit
V A A A mW °C °C
Ta=25°C Max. Unit
0.4 V 0.5 V 1 µA 10 pF 5 ns
KSD-2035-000
2
Electrical Characteristic Curves
Fig. 1 IF-VF
SDB310WK
Fig. 2 IR -VR
Fig. 3 CT-VR
KSD-2035-000
3
...
