BARRIER RECTIFIER. SDB320 Datasheet

SDB320 RECTIFIER. Datasheet pdf. Equivalent


Part SDB320
Description 3A SCHOTTKY BARRIER RECTIFIER
Feature 20V, 3A SCHOTTKY BARRIER RECTIFIER SDB320 Schottky Barrier Rectifier Features  Low forward voltag.
Manufacture KODENSHI
Datasheet
Download SDB320 Datasheet


20V, 3A SCHOTTKY BARRIER RECTIFIER SDB320 Schottky Barrier SDB320 Datasheet
Recommendation Recommendation Datasheet SDB320 Datasheet




SDB320
20V, 3A SCHOTTKY BARRIER RECTIFIER
SDB320
Schottky Barrier Rectifier
Features
Low forward voltage drop
Low power loss and High efficiency
Low leakage current
High surge capability
Full lead (Pb)-free and RoHS compliant device
1
1
2
2
Pin Configuration
Pin 1: Cathode
Pin 2: Anode
Applications
High efficiency SMPS
Output rectification
High frequency switching
Freewheeling
DC-DC converter systems
STOOD-2-51206
Product Characteristics
IF(AV)
VRRM
VFM at 125
IFSM
3A
20V
0.40V (Typ.)
30A
Description
The SDB320 is suited for Switch Mode Power Supply and high frequency DC to DC converters.
This device is especially intended for use in low voltage, high frequency inverters, freewheeling and
polarity protection applications.
Ordering Information
Device
SDB320
Marking Code
32C
Package
SOD-106
Packaging
Tape & Reel
Marking Information
32C = Specific Device Code
YWW = Year & Week Code Marking
-. Y = Year Code
-. WW = Week Code
= Color band denote cathode
KSD-D6A014-001
1



SDB320
SDB320
Absolute Maximum Ratings (Rating at 25ambient temperature unless otherwise specified.)
Characteristic
Symbol
Value
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRWM
VR
IF(AV)
20
3
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
IFSM
30
Storage temperature range
Tstg -55to +150
Maximum operating junction temperature
TJ 150
Unit
V
A
A
Thermal Characteristics
Characteristic
Maximum thermal resistance junction to ambient
* 1) Device mounted on FR-4 board with recommended pad layout.
Symbol
Rth(j-a) 1)
Value
100
Unit
/W
Electrical Characteristics (Rating at 25ambient temperature unless otherwise specified.)
Characteristic
Symbol
Test Condition
Min. Typ.
Peak forward voltage drop
Reverse leakage current
VFM 2)
IFM = 3A
IRM 2)
VR = VRRM
TJ=25
TJ=125
TJ=25
TJ=125
- 0.46
- 0.40
--
--
Typical junction capacitance
CJ
* 2) Pulse test: tP380 , Duty cycle2%
VR=1V, f=1MHz
- 650
Max.
0.50
0.43
2
50
-
Unit
V
V
mA
mA
pF
To evaluate the conduction losses use the following equation : PF = 0.37 IF(AV) + 0.0276 IF2(RMS)
IFM
2 IF(AV)
IF(AV)
Forward Voltage : VFM = Vto + rd IFM
Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS)
VFM
KSD-D6A014-001
2







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