SD103AWS/SD103BWS/SD103CWS
Schottky Barrier Diode
FEATURES
z Low Forward Voltage Drop z Guard Ring Construction For Tr...
SD103AWS/SD103BWS/SD103CWS
Schottky Barrier Diode
FEATURES
z Low Forward Voltage Drop z Guard Ring Construction For Transient
Protection
z Negligible Reverse Recovery Time
z Low Reverse Capacitance
Pb
Lead-free
APPLICATIONS
z Schotty barrier switching
ORDERING INFORMATION
Type No.
Marking
SD103AWS SD103BWS SD103CWS
S4 S5 S6
SOD-323
Package Code
SOD-323 SOD-323 SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol SD103AWS SD103BWS SD103CWS Unit
Peak Repetitive Peak reverse voltage VRRM
Working Peak DC Reverse Voltage
VRWM
40
30
20
V
VR
RMS Reverse Voltage
VR(RMS)
28
21
14
V
Forward Continuous Current
Repetitive Peak Forward Current @t≤1.0s
IF 350
IFSM
1.5
mA A
Power Dissipation
Thermal Resistance Junction to Ambient
Pd RθJA
200 625
mW ℃/W
Storage temperature
Tstg -65 to+125
℃
SD103AWS/SD103BWS/SD103CWS
Schottky Barrier Diode
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Reverse Breakdown Voltage SD103AWS
SD103BWS SD103CWS
Symbol V(BR)R
Min. 40 30 20
Typ.
Forward voltage Reverse current
Junction Capacitance
VF
SD103AWS SD103BWS SD103CWS
IRM CJ
50
Reverse Recovery Time
trr 10
Max. Unit
V
0.37 0.60
V
5.0 μA
pF
ns
Conditions IR=10μA IR=10μA IR=10μA IF=20mA IF=200mA VR=30V VR=20V VR=10V VR=0,f=1MHz IR=IF=200mA Irr=0.1*IR,RL=100
Ω
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SD103AWS/SD103BWS/SD103CWS
Schottky Barrier Diode
PACKAGE OUTLINE
Plastic surface ...