SD103CWS

SD103AWS/SD103BWS/SD103CWS Schottky Barrier Diode FEATURES z Low Forward Voltage Drop z Guard Ring Construction For Transient Protection z Negligible Reverse Recovery Time z Low Reverse Capacitance Pb Lead-free APPLICATIONS z Schotty barrier switching ORDERING INFORMATION Type No. Marking SD103AWS SD103BWS SD103CWS S4 S5 S6 SOD-323 Package Code SOD-323 SOD-323 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol SD103AWS SD103BWS SD103CWS Unit Peak Repetitive Peak reverse voltage VRRM Working Peak DC Reverse Voltage VRWM 40 30 20 V VR RMS Reverse Voltage VR(RMS) 28 21 14 V Forward Continuous Current Repetitive Peak Forward Current @t≤1.0s IF 350 IFSM 1.5 mA A Power Dissipation Thermal Resistance Junction to Ambient Pd RθJA 200 625 mW ℃/W Storage temperature Tstg -65 to+125 ℃ SD103AWS/SD103BWS/SD103CWS Schottky Barrier Diode ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse Breakdown Voltage SD103AWS SD103BWS SD103CWS Symbol V(BR)R Min. 40 30 20 Typ. Forward voltage Reverse current Junction Capacitance VF SD103AWS SD103BWS SD103CWS IRM CJ 50 Reverse Recovery Time trr 10 Max. Unit V 0.37 0.60 V 5.0 μA pF ns Conditions IR=10μA IR=10μA IR=10μA IF=20mA IF=200mA VR=30V VR=20V VR=10V VR=0,f=1MHz IR=IF=200mA Irr=0.1*IR,RL=100 Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified SD103AWS/SD103BWS/SD103CWS Schottky Barrier Diode PACKAGE OUTLINE Plastic surface ...