SD103CW

BL Galaxy Central Micro-electrical Production specification Schottky Barrier Diode SD103AW/SD103BW/SD103CW FEATURES z Low Forward Voltage Drop. z Guard Ring Construction For Transient Protection. z Negligible Reverse Recovery Time. z Low Reverse Capacitance. Pb Lead-free APPLICATIONS z Schotty barrier switching. SOD-123 ORDERING INFORMATION Type No. Marking SD103AW SD103BW SD103CW S4 S5 S6 Package Code SOD-123 SOD-123 SOD-123 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol SD103AW SD103BW SD103CW Unit Peak Repetitive Peak reverse voltage VRR Working Peak DC Reverse Voltage VRWM 40 30 20 V VR RMS Reverse Voltage VR(RMS) 28 21 14 V Forward Continuous Current IF 350 mA Repetitive Peak Forward Current @t≤1.0s IFRM 1.5 A Power Dissipation Pd 400 mW Thermal Resistance Junction to Ambient Storage temperature RθjA Tstg 300 -65~+125 ℃/W ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSKA014 Rev.A www.galaxycn.com 1 BL Galaxy Central Micro-electrical Production specification Schottky Barrier Diode SD103AW/SD103BW/SD103CW Parameter Reverse Breakdown Voltage SD103AW SD103BW SD103CW Symbol V(BR)R Min. 40 30 20 Typ. Forward voltage Reverse current SD103AW SD103BW SD103CW Capacitance between terminals Reverse Recovery Time VF IRM CT trr 50 10 Max. Unit V 0.37 0.60 V 5.0 μA pF ns Conditions IR=10μA IR=10μA IR=10μA IF=20mA IF=200mA VR=30V VR=20V VR=10V VR=0,f=1MHz...