Power MOSFET. SMK1060FG Datasheet

SMK1060FG MOSFET. Datasheet pdf. Equivalent


Part SMK1060FG
Description Advanced N-Ch Power MOSFET
Feature SMK1060FG Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source .
Manufacture KODENSHI
Datasheet
Download SMK1060FG Datasheet


SMK1060FG Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING A SMK1060FG Datasheet
Recommendation Recommendation Datasheet SMK1060FG Datasheet




SMK1060FG
SMK1060FG
Advanced N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
Low drain-source On resistance: RDS(on)=0.6(Typ.)
Low gate charge: Qg=35nC (Typ.)
Low reverse transfer capacitance: Crss=18pF (Typ.)
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SMK1060FG
SMK1060G
TO-220FT-3L
(Short Dambar)
GDS
TO-220FT-3L
Marking Information
AUAKUK
SMK1ΔY0YM6MD0GDD D
SDB20D45
Column 1: Manufacturer
Column 2: Production Information
e.g.) YMDD
-. : Option Code
-. : Factory Management Code
-. YMDD: Date Code (Year, Month, Daily)
Column 3: Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID
Tc=25C
Tc=100C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rev. date: 23-JUN-14
KSD-T0O154-000
Rating
600
30
10
6.32
40
480
10
11.6
40
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
www.auk.co.kr
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SMK1060FG
Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
Rth(j-c)
Rth(j-a)
SMK1060FG
Rating
Max. 3.1
Max. 62.5
Unit
C/W
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance (Note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time (Note 3,4)
Rise time (Note 3,4)
Turn-off delay time (Note 3,4)
Fall time (Note 3,4)
Total gate charge (Note 3,4)
Gate-source charge (Note 3,4)
Gate-drain charge (Note 3,4)
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
ID=250uA, VGS=0
VDS=10V, ID=250uA
VDS=600V, VGS=0V
VDS=600V, Tc=150C
VDS=0V, VGS=30V
VGS=10V, ID=5A
VDS=10V, ID=5A
VDS=25V, VGS=0V,
f=1MHz
VDS=300V, ID=10A,
RG=25
VDS=480V, VGS=10V,
ID=10A
Min.
600
2
-
-
-
-
-
-
-
-
-
-
-
-
28
7.5
6.8
Typ. Max.
--
-4
-1
- 100
- 100
0.6 0.75
8-
2000 2350
160 215
18
23 -
69 -
144 -
77 -
35 42
10 12.5
9 11.3
Unit
V
V
uA
uA
nA
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time (Note 3,4)
Reverse recovery charge (Note 3,4)
IS Integral reverse diode
ISM in the MOSFET
VSD VGS=0V, ISD=10A
trr ISD=10A, VGS=0V
Qrr dIF/dt=100A/us
- - 10
- - 40
- - 1.4
- 470 -
-6-
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=10mH, IAS=4A, VDD=50V, RG=25, Starting TJ=25C
3. Pulse test: Pulse width300us, Duty cycle2%
4. Essentially independent of operating temperature typical characteristics
Unit
A
A
V
ns
uC
Rev. date: 23-JUN-14
KSD-T0O154-000
www.auk.co.kr
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