Power MOSFET. SMK1060FJ Datasheet

SMK1060FJ MOSFET. Datasheet pdf. Equivalent


Part SMK1060FJ
Description Advanced N-Ch Power MOSFET
Feature SMK1060FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features  High Voltage : BV.
Manufacture KODENSHI
Datasheet
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SMK1060FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR AP SMK1060FJ Datasheet
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SMK1060FJ
SMK1060FJ
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
High Voltage : BVDSS=600V(Min.)
Low Crss : Crss=18pF(Typ.)
Low gate charge : Qg=35nC(Typ.)
Low RDS(on) : RDS(on)=0.75Ω(Max.)
Ordering Information
Type No.
Marking
Package Code
SMK1060FJ
SMK1060
TO-220F-3L
(J Forming)
PIN Connection
G
DS
G
TO-220F-3L
Marking Diagram
AAUUKK
SMGΔKYYM1M0D6DD0D
SDB20D45
Column 1 : Manufacturer
Column 2 : Production Information
e.g.) GYMDD
-. G : Factory management code
-. YMDD : Date Code (year, month, date)
Column 3 : Device Code
D
S
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current (DC) *
Drain current (Pulsed) *
ID
TC=25C
TC=100C
IDM
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
PD
IAS
EAS
IAR
EAR
Junction temperature
TJ
Storage temperature range
Tstg
* Limited by maximum junction temperature
Rating
600
30
10
5.8
38
40
10
480
10
11.6
150
-55~150
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max.
3.1
62.5
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Unit
C/W
KSD-T0O069-000
1



SMK1060FJ
SMK1060FJ
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
BVDSS ID=250uA, VGS=0V
Gate threshold voltage
VGS(th)
ID=250uA, VDS=VGS
Drain-source cut-off current
IDSS
VDS=600V, VGS=0V
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
IGSS
RDS(on)
gfs
VDS=0V, VGS=30V
VGS=10V, ID=5.0A
VDS=10V, ID=5.0A
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS=0V, VDS=25V
f=1 MHz
Turn-on delay time
Rise time
Turn-off delay time
td(on)
tr
td(off)
VDD=300V, ID=10A
RG=25
Fall time
tf
Total gate charge
Gate-source charge
Gate-drain charge
Qg VDS=480V, VGS=10V
Qgs ID=10A
Qgd
Min.
600
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
--
- 4.0
-1
- 100
0.60 0.75
8.0 -
2000 2350
160 215
18 -
23 -
69 -
144 -
77 -
35 57
9-
10 -
Unit
V
V
uA
nA
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current (DC)
Source current (Pulsed)
Forward voltage
IS Integral reverse diode
ISM in the MOSFET
VSD VGS=0V, IS=10A
- - 10
- - 40
- - 1.4
Reverse recovery time
Reverse recovery charge
trr IS=10A, VGS=0V
Qrr dIF/dt=100A/us
- 470 -
-6-
Unit
A
V
ns
uC
Note ;
Repetitive rating : Pulse width limited by maximum junction temperature
L=10mH, IAS=9.5A, VDD=50V, RG=25, Starting TJ=25
Pulse Test : Pulse width300us, Duty cycle2%
Essentially independent of operating temperature
KSD-T0O069-000
2







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