SMK1060FJ

SMK1060FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features  High Voltage : BVDSS=600V(Min.)  Low Crss : Crss=18pF(Typ.)  Low gate charge : Qg=35nC(Typ.)  Low RDS(on) : RDS(on)=0.75Ω(Max.) Ordering Information Type No. Marking Package Code SMK1060FJ SMK1060 TO-220F-3L (J Forming) PIN Connection G DS G TO-220F-3L Marking Diagram AAUUKK SMGΔKYYM1M0D6DD0D SDB20D45 Column 1 : Manufacturer Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code D S Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current (DC) * Drain current (Pulsed) * ID TC=25C TC=100C IDM Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy ② ② ① ① PD IAS EAS IAR EAR Junction temperature TJ Storage temperature range Tstg * Limited by maximum junction temperature Rating 600 30 10 5.8 38 40 10 480 10 11.6 150 -55~150 Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 3.1 62.5 Unit V V A A A W A mJ A mJ C Unit C/W KSD-T0O069-000 1 SMK1060FJ Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Drain-source breakdown voltage BVDSS ID=250uA, VGS=0V Gate threshold voltage VGS(th) ID=250uA, VDS=VG...