isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capab...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·TV horizontal deflection output applications. ·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
300
V
VCEO Collector-Emitter Voltage
150
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
Ta=25℃ PC
Collector Power Dissipation
TC=25℃
Tj
Junction Temperature
2
A
1.75 W
40
150
℃
Tstg
Storage Ttemperature Range
-55~150 ℃
2SD1069
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; L= 50mH
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICES
Collector Cutoff Current
VCE= 250V; VBE= 0
hFE
DC Current Gain
IC= 5A ; VCE= 1.5V
fT
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V
VECF
C-E Diode Forward Voltage
IF= 6A
tf
Fall Time
IC...