INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1069
DESCRIPTION ·High Collector ...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD1069
DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode
APPLICATIONS ·TV horizontal deflection output applications. ·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
300 V
VCEO Collector-Emitter Voltage
150 V
VEBO Emitter-Base Voltage
6V
IC Collector Current-Continuous
7A
ICM Collector Current-Peak
15 A
IBB Base Current-Continuous
Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃
Tj Junction Temperature
Tstg Storage Ttemperature Range
2A
1.75 W
40
150 ℃
-55~150 ℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD1069
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 50mH
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 0.5A
ICES Collector Cutoff Current
VCE= 250V; VBE= 0
hFE DC Current Gain
IC= 5A ; VCE= 1.5V
fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V
VECF
C-E Diode Forward Voltage
IF= 6A
tf Fall Time
ICP= 5A; IB1(end)= 0.5A
MIN TYP. MAX UNI...
