Power Transistor. D1069 Datasheet

D1069 Transistor. Datasheet pdf. Equivalent


Part D1069
Description Silicon NPN Power Transistor
Feature INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1069 DESCRIPT.
Manufacture INCHANGE
Datasheet
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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc D1069 Datasheet
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D1069
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1069
DESCRIPTION
·High Collector Current Capability
·High Collector Power Dissipation Capability
·Built-in Damper Diode
APPLICATIONS
·TV horizontal deflection output applications.
·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
300 V
VCEO Collector-Emitter Voltage
150 V
VEBO Emitter-Base Voltage
6V
IC Collector Current-Continuous
7A
ICM Collector Current-Peak
15 A
IBB Base Current-Continuous
Collector Power Dissipation
Ta=25
PC
Collector Power Dissipation
TC=25
Tj Junction Temperature
Tstg Storage Ttemperature Range
2A
1.75
W
40
150
-55~150
isc Websitewww.iscsemi.cn



D1069
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1069
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 50mH
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 0.5A
ICES Collector Cutoff Current
VCE= 250V; VBE= 0
hFE DC Current Gain
IC= 5A ; VCE= 1.5V
fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V
VECF
C-E Diode Forward Voltage
IF= 6A
tf Fall Time
ICP= 5A; IB1(end)= 0.5A
MIN TYP. MAX UNIT
150 V
300 V
6V
1.5 V
1.5 V
1 mA
10
18 MHz
1.8 V
1.0 μs
isc Websitewww.iscsemi.cn







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