Signal Transistor. BC847B Datasheet

BC847B Transistor. Datasheet pdf. Equivalent


Part BC847B
Description NPN Small Signal Transistor
Feature Small Signal Product BC846A/B, BC847A/B/C, BC848A/B/C Taiwan Semiconductor NPN Small Signal Transis.
Manufacture Taiwan Semiconductor
Datasheet
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BC847B
Small Signal Product
BC846A/B, BC847A/B/C, BC848A/B/C
Taiwan Semiconductor
NPN Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: SOT- 23 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 0.008gram (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
BC846
Collector-Base Voltage
BC847
BC848
BC846
Collector-Emitter Voltage
BC847
BC848
BC846
Emitter-Base Voltage
BC847
BC848
Collector Current
Junction and Storage Temperature Range
Notes: 1. Valid provided that electrodes are kept at ambient temperature
PD
VCBO
VCEO
VEBO
IC
TJ , TSTG
200
80
50
30
65
45
30
6
6
5
0.1
-55 to + 150
UNIT
mW
V
V
V
A
°C
PARAMETER
BC846
Collector-Base Breakdown Voltage
BC847
BC848
BC846
Collector-Emitter Breakdown Voltage
BC847
BC848
BC846
Emitter-Base Breakdown Voltage
BC847
BC848
Collector Cut-off Current
Emitter Cut-off Current
BC846A, BC847A, BC848A
DC Current Gain
BC846B, BC847B, BC848B
BC847C, BC848C
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
VCE= 5V
SYMBOL
IC= 10μA IE= 0
V(BR)CBO
IC= 10mA IB= 0
V(BR)CEO
IE= 1μA
IC= 0
V(BR)EBO
VCB= 30V
VEB= 5 V
IE= 0
IC=0
ICBO
IEBO
VCE= 5V IC= 2mA
hFE
IC= 100mA IB= 5mA
IC= 100mA IB= 5mA
IC= 10 mA f= 100MHz
VCE(sat)
VBE(sat)
fT
Document Number: DS_S1404004
MIN
80
50
30
65
45
30
6
6
5
-
-
110
200
420
-
-
100
MAX
-
UNIT
V
-V
-V
100 nA
0.1 μA
220
450
800
0.5 V
1.1 V
- MHz
Version: G14



BC847B
Small Signal Product
BC846A/B, BC847A/B/C, BC848A/B/C
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES (BC846A/B, BC847A/B/C, BC848A/B/C)
(TA=25unless otherwise noted)
100
80
60
40
20
0
0
Fig.1 Static Characteristic
IB = 400μA
IB = 350μA
IB = 300μA
IB = 250μA
IB = 200μA
IB = 150μA
IB = 100μA
IB = 50μA
4 8 12 16
VCE[V], Collector-Emitter Voltage
20
400
300
hFE 200
100
0
0
Fig.2 DC Current Gain
(1)
(2)
(3)
1 10
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
100 1000
IC (mA)
1200
1000
VBE
(mV)
800
600
400
200
0
0.1
Fig.3 Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1 10 100
VCE = 5 V.
(1) Tamb = -55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
1000
Fig. 4 Base-Emitter On Voltage
100
VCE = 2V
10
1
0.1
0
0.2 0.4 0.6 0.8
1
VBE[V], Base-Emitter Voltage
1.2
100
10
1
0.1
1
Fig.5 Collector Output Capacitance
f=1MHz
10 100
VCB[V], Collector-Base Voltage
1000
1000
100
Fig. 6 Current Gain Bandwidth Product
VCE=5V
10
1
0.1
1 10
IC[mA], Collector Current
100
Document Number: DS_S1404004
Version: G14







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