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BZD17C18P Dataheets PDF



Part Number BZD17C18P
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description 11V - 220V Zener Diode
Datasheet BZD17C18P DatasheetBZD17C18P Datasheet (PDF)

BZD17C11P – BZD17C220P Taiwan Semiconductor 0.8W, 11V - 220V Zener Diode FEATURES ● Silicon zener diodes ● Low profile surface-mount package ● Zener and surge current specification ● Low leakage current ● Excellent stability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Voltage regulating ● Reference voltage ● Protection circuit KEY PARAMETERS PARAMETER VALUE UNIT VZ 11 - 220 V Test current IZT 4 - 50 mA .

  BZD17C18P   BZD17C18P


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BZD17C11P – BZD17C220P Taiwan Semiconductor 0.8W, 11V - 220V Zener Diode FEATURES ● Silicon zener diodes ● Low profile surface-mount package ● Zener and surge current specification ● Low leakage current ● Excellent stability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Voltage regulating ● Reference voltage ● Protection circuit KEY PARAMETERS PARAMETER VALUE UNIT VZ 11 - 220 V Test current IZT 4 - 50 mA Ptot TJ MAX Package 0.8 W 175 °C Sub SMA Configuration Single die MECHANICAL DATA ● Case: Sub SMA ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.019g (approximately) Sub SMA ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE Forward voltage @ IF = 0.2A Power dissipation VF 1.2 TL = 80°C 2.3 TA = 25°C(1) Ptot 0.8 Non-repetitive peak pulse power dissipation 100μs square pulse(2) PZSM 300 Junction temperature TJ - 55 to +175 Storage temperature Notes: 1. Mounted on Cu-Pad size 5mm x 5mm 2. TJ = 25°C prior to surge TSTG - 55 to +175 UNIT V W W W °C °C 1 Version: L2103 BZD17C11P – BZD17C220P Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-lead thermal resistance Junction-to-ambient thermal resistance(1) Notes: 1. Mounted on Cu-Pad size 5mm x 5mm SYMBOL RӨJL RӨJA TYP 30 180 UNIT °C/W °C/W ORDERING INFORMATION ORDERING CODE(1) PACKAGE BZD17CxP Sub SMA Notes: 1. “x” defines voltage from 11V(BZD17C11P) to 220V(BZD17C220P) PACKING 10,000 / Tape & Reel ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Working Differential Temperature Voltage Resistance Coefficient Part number Marking code VZ @ IZT(1) V rdif @ IZ Ω αZ @ IZ %/oC Test Current IZT mA Min Max Typ Max Min Max BZD17C11P J2 10.4 11.6 4 7 0.05 0.10 50 BZD17C12P J3 11.4 12.7 4 7 0.05 0.10 50 BZD17C13P J4 12.4 14.1 5 10 0.05 0.10 50 BZD17C15P J5 13.8 15.6 5 10 0.05 0.10 25 BZD17C16P J6 15.3 17.1 6 15 0.06 0.11 25 BZD17C18P J7 16.8 19.1 6 15 0.06 0.11 25 BZD17C24P K0 22.8 25.6 7 15 0.06 0.11 25 BZD17C27P K1 25.1 28.9 7 15 0.06 0.11 25 BZD17C33P K3 31 35 8 15 0.06 0.11 25 BZD17C36P K4 34 38 21 40 0.06 0.11 10 BZD17C39P K5 37 41 21 40 0.06 0.11 10 BZD17C43P K6 40 46 24 45 0.07 0.12 10 BZD17C47P K7 44 50 24 45 0.07 0.12 10 BZD17C51P K8 48 54 25 60 0.07 0.12 10 BZD17C62P L0 58 66 25 80 0.08 0.13 10 BZD17C68P L1 64 72 25 80 0.08 0.13 10 BZD17C75P L2 70 79 30 100 0.08 0.13 10 BZD17C100P L5 94 106 60 200 0.09 0.13 4 BZD17C120P L7 114 127 150 300 0.09 0.13 4 BZD17C180P M1 168 191 280 450 0.09 0.13 4 BZD17C200P M2 188 212 350 750 0.09 0.13 4 BZD17C220P M3 208 233 430 900 0.09 0.13 4 Notes: 1. Pulse test: tp ≦5ms. Reverse Current@ Reverse Voltage IR VR μA V Max 4.0 8.2 3.0 9.1 2.0 10 1.0 11 1.0 12 1.0 13 1.0 18 1.0 20 1.0 24 1.0 27 1.0 30 1.0 33 1.0 36 1.0 39 1.0 47 1.0 51 1.0 56 1.0 75 1.0 91 1.0 130 1.0 150 1.0 160 2 Version: L2103 BZD17C11P – BZD17C220P Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Power Dissipation vs. Ambient Temperature POWER DISSIPATION(W) 2.4 2.0 TL 1.6 1.2 0.8 TA 0.4 0.0 25 55 85 115 145 175 TEMPERATURE (°C) Fig.3 Typical Forward Characteristics 1010 UF1DLW 1 TJ=125°C 10.1 TJ=25°C CAPACITANCE (pF) (A ) Fig.2 Typical Junction Capacitance 1000 C12P 100 C27P 10 0 C200P 1 2 3 REVERSE VOLTAGE (V) INSTANTANEOUS FORWARD CURRENT (A) 0.01 Pulse width 0.1 0.001 0.7 0.8 0.9 1.0 1.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE (V) 3 Version: L2103 PACKAGE OUTLINE DIMENSIONS Sub SMA BZD17C11P – BZD17C220P Taiwan Semiconductor SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code 4 Version: L2103 BZD17C11P – BZD17C220P Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC.


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