Document
BZD17C11P – BZD17C220P
Taiwan Semiconductor
0.8W, 11V - 220V Zener Diode
FEATURES
● Silicon zener diodes ● Low profile surface-mount package ● Zener and surge current specification ● Low leakage current ● Excellent stability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Voltage regulating ● Reference voltage ● Protection circuit
KEY PARAMETERS
PARAMETER VALUE UNIT
VZ
11 - 220
V
Test current IZT
4 - 50
mA
Ptot TJ MAX Package
0.8
W
175
°C
Sub SMA
Configuration
Single die
MECHANICAL DATA
● Case: Sub SMA ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.019g (approximately)
Sub SMA
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Forward voltage @ IF = 0.2A Power dissipation
VF
1.2
TL = 80°C
2.3
TA = 25°C(1)
Ptot
0.8
Non-repetitive peak pulse power dissipation 100μs square pulse(2)
PZSM
300
Junction temperature
TJ
- 55 to +175
Storage temperature
Notes: 1. Mounted on Cu-Pad size 5mm x 5mm 2. TJ = 25°C prior to surge
TSTG
- 55 to +175
UNIT V W W
W
°C °C
1
Version: L2103
BZD17C11P – BZD17C220P
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER Junction-to-lead thermal resistance Junction-to-ambient thermal resistance(1) Notes: 1. Mounted on Cu-Pad size 5mm x 5mm
SYMBOL RӨJL RӨJA
TYP 30 180
UNIT °C/W °C/W
ORDERING INFORMATION
ORDERING CODE(1)
PACKAGE
BZD17CxP
Sub SMA
Notes: 1. “x” defines voltage from 11V(BZD17C11P) to 220V(BZD17C220P)
PACKING 10,000 / Tape & Reel
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
Working
Differential Temperature
Voltage
Resistance
Coefficient
Part number
Marking code
VZ @ IZT(1) V
rdif @ IZ Ω
αZ @ IZ %/oC
Test Current
IZT mA
Min
Max
Typ
Max
Min
Max
BZD17C11P
J2
10.4 11.6
4
7
0.05 0.10
50
BZD17C12P
J3
11.4 12.7
4
7
0.05 0.10
50
BZD17C13P
J4
12.4 14.1
5
10
0.05 0.10
50
BZD17C15P
J5
13.8 15.6
5
10
0.05 0.10
25
BZD17C16P
J6
15.3 17.1
6
15
0.06 0.11
25
BZD17C18P
J7
16.8 19.1
6
15
0.06 0.11
25
BZD17C24P
K0
22.8 25.6
7
15
0.06 0.11
25
BZD17C27P
K1
25.1 28.9
7
15
0.06 0.11
25
BZD17C33P
K3
31
35
8
15
0.06 0.11
25
BZD17C36P
K4
34
38
21
40
0.06 0.11
10
BZD17C39P
K5
37
41
21
40
0.06 0.11
10
BZD17C43P
K6
40
46
24
45
0.07 0.12
10
BZD17C47P
K7
44
50
24
45
0.07 0.12
10
BZD17C51P
K8
48
54
25
60
0.07 0.12
10
BZD17C62P
L0
58
66
25
80
0.08 0.13
10
BZD17C68P
L1
64
72
25
80
0.08 0.13
10
BZD17C75P
L2
70
79
30
100 0.08 0.13
10
BZD17C100P L5
94 106
60
200 0.09 0.13
4
BZD17C120P L7
114 127 150
300 0.09 0.13
4
BZD17C180P M1
168 191 280
450 0.09 0.13
4
BZD17C200P M2
188 212 350
750 0.09 0.13
4
BZD17C220P M3
208 233 430
900 0.09 0.13
4
Notes: 1. Pulse test: tp ≦5ms.
Reverse Current@
Reverse Voltage
IR
VR
μA
V
Max
4.0
8.2
3.0
9.1
2.0
10
1.0
11
1.0
12
1.0
13
1.0
18
1.0
20
1.0
24
1.0
27
1.0
30
1.0
33
1.0
36
1.0
39
1.0
47
1.0
51
1.0
56
1.0
75
1.0
91
1.0
130
1.0
150
1.0
160
2
Version: L2103
BZD17C11P – BZD17C220P
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Power Dissipation vs. Ambient Temperature
POWER DISSIPATION(W)
2.4
2.0
TL
1.6
1.2
0.8
TA
0.4
0.0 25
55
85
115
145
175
TEMPERATURE (°C)
Fig.3 Typical Forward Characteristics
1010
UF1DLW 1
TJ=125°C 10.1
TJ=25°C
CAPACITANCE (pF) (A )
Fig.2 Typical Junction Capacitance
1000
C12P
100 C27P
10 0
C200P
1
2
3
REVERSE VOLTAGE (V)
INSTANTANEOUS FORWARD CURRENT (A)
0.01
Pulse width
0.1
0.001
0.7
0.8
0.9
1.0
1.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
3
Version: L2103
PACKAGE OUTLINE DIMENSIONS
Sub SMA
BZD17C11P – BZD17C220P
Taiwan Semiconductor
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N = Marking Code
G = Green Compound
YW = Date Code
F
= Factory Code
4
Version: L2103
BZD17C11P – BZD17C220P
Taiwan Semiconductor
Notice
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