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BZD27C16P Dataheets PDF



Part Number BZD27C16P
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description 10V - 220V Zener Diode
Datasheet BZD27C16P DatasheetBZD27C16P Datasheet (PDF)

BZD27C10P – BZD27C220P Taiwan Semiconductor 1W, 10V - 220V Zener Diode FEATURES ● Silicon zener diodes ● Low profile surface-mount package ● Zener and surge current specification ● Low leakage current ● Excellent stability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Voltage regulating ● Reference voltage ● Protection circuit KEY PARAMETERS PARAMETER VALUE UNIT VZ 10 - 220 V Test current IZT 5 - 50 mA P.

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BZD27C10P – BZD27C220P Taiwan Semiconductor 1W, 10V - 220V Zener Diode FEATURES ● Silicon zener diodes ● Low profile surface-mount package ● Zener and surge current specification ● Low leakage current ● Excellent stability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Voltage regulating ● Reference voltage ● Protection circuit KEY PARAMETERS PARAMETER VALUE UNIT VZ 10 - 220 V Test current IZT 5 - 50 mA Ptot 1 W TJ MAX 175 °C Package Sub SMA Configuration Single die MECHANICAL DATA ● Case: Sub SMA ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.019g (approximately) Sub SMA ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE Forward voltage @ IF = 0.2A Power dissipation VF 1.2 TL = 73°C 2.3 TA = 25°C(1) Ptot 1.0 Non-repetitive peak pulse power dissipation 100μs square pulse(2) PZSM 300 Non-repetitive peak pulse power dissipation 10/1000μs waveform (BZD27C10P to BZD27C100P) PRSM 150 Non-repetitive peak pulse power dissipation 10/1000μs waveform (BZD27C110P to BZD27C220P) PRSM 100 Junction temperature TJ - 55 to +175 Storage temperature Notes: 1. Mounted on Cu-Pad size 5mm x 5mm 2. TJ = 25°C prior to surge TSTG - 55 to +175 UNIT V W W W W W °C °C 1 Version: AB2103 BZD27C10P – BZD27C220P Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP Junction-to-lead thermal resistance RӨJL 44 Junction-to-ambient thermal resistance RӨJA 88 Junction-to-case thermal resistance RӨJC 48 Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) UNIT °C/W °C/W °C/W ORDERING INFORMATION ORDERING CODE(1) PACKAGE BZD27CxP Sub SMA Notes: 1. “x” defines voltage from 10V(BZD27C10P) to 220V(BZD27C220P) PACKING 10,000 / Tape & Reel 2 Version: AB2103 BZD27C10P – BZD27C220P Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Differential Working Voltage Resistance Temperature Coefficient Part number Marking code VZ @ IZT V rdif @ IZ Ω αZ @ IZ %/oC Test Current IZT mA Min Nom Max Typ Max Min Max BZD27C10P E1 9.4 10 10.6 2 4 0.05 0.09 50 BZD27C11P E2 10.4 11 11.6 4 7 0.05 0.10 50 BZD27C12P E3 11.4 12.05 12.7 4 7 0.05 0.10 50 BZD27C13P E4 12.4 13.25 14.1 5 10 0.05 0.10 50 BZD27C15P E5 13.8 14.7 15.6 5 10 0.05 0.10 25 BZD27C16P E6 15.3 16.2 17.1 6 15 0.06 0.11 25 BZD27C18P E7 16.8 17.95 19.1 6 15 0.06 0.11 25 BZD27C20P E8 18.8 20 21.2 6 15 0.06 0.11 25 BZD27C22P E9 20.8 22.05 23.3 6 15 0.06 0.11 25 BZD27C24P F0 22.8 24.2 25.6 7 15 0.06 0.11 25 BZD27C27P F1 25.1 27 28.9 7 15 0.06 0.11 25 BZD27C30P F2 28 30 32 8 15 0.06 0.11 25 BZD27C33P F3 31 33 35 8 15 0.06 0.11 25 BZD27C36P F4 34 36 38 21 40 0.06 0.11 10 BZD27C39P F5 37 39 41 21 40 0.06 0.11 10 BZD27C43P F6 40 43 46 24 45 0.07 0.12 10 BZD27C47P F7 44 47 50 24 45 0.07 0.12 10 BZD27C51P F8 48 51 54 25 60 0.07 0.12 10 BZD27C56P F9 52 56 60 25 60 0.07 0.12 10 BZD27C62P G0 58 62 66 25 80 0.08 0.13 10 BZD27C68P G1 64 68 72 25 80 0.08 0.13 10 BZD27C75P G2 70 74.5 79 30 100 0.08 0.13 10 BZD27C82P G3 77 82 87 60 200 0.08 0.13 10 BZD27C91P G4 85 90.5 96 60 200 0.08 0.13 5 BZD27C100P G5 94 100 106 60 200 0.09 0.13 5 BZD27C110P G6 104 110 116 80 250 0.09 0.13 5 BZD27C120P G7 114 120.5 127 150 300 0.09 0.13 5 BZD27C130P G 124 132.5 141 150 300 0.09 0.13 5 BZD27C150P G9 138 147 156 150 300 0.09 0.13 5 BZD27C160P H0 153 162 171 150 350 0.09 0.13 5 BZD27C180P H1 168 179.5 191 280 450 0.09 0.13 5 BZD27C200P H2 188 200 212 350 750 0.09 0.13 5 BZD27C220P H3 208 220.5 233 430 900 0.09 0.13 5 Reverse Current@ Reverse Voltage IR VR μA V Max 7 7.5 4 8.2 3 9.1 2 10 1 11 1 12 1 13 1 15 1 16 1 18 1 20 1 22 1 24 1 27 1 30 1 33 1 36 1 39 1 43 1 47 1 51 1 56 1 62 1 68 1 75 1 82 1 91 1 100 1 110 1 120 1 130 1 150 1 160 3 Version: AB2103 BZD27C10P – BZD27C220P Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Power Dissipation POWER DISSIPATION(W) 2.5 2.0 RthjL=44°C/W 1.5 RthjA=88°C/W 1.0 0.5 0.0 25 55 85 115 145 175 TEMPERATURE (°C) Fig.3 Typical Forward Characteristics 1010 UF1DLW 1 Typ. VF TJ=125°C 1 0.1 Max. VF TJ=25°C CAPACITANCE (pF) (A ) Fig.2 Typical Junction Capacitance 1000 C12P 100 C27P 10 0 C200P 1 2 3 REVERSE VOLTAGE (V) INSTANTANEOUS FORWARD CURRENT (A) 0.01 0.1 Pulse width 0.0010.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE (V) 4 Ve.


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