Document
BZD27C10P – BZD27C220P
Taiwan Semiconductor
1W, 10V - 220V Zener Diode
FEATURES
● Silicon zener diodes ● Low profile surface-mount package ● Zener and surge current specification ● Low leakage current ● Excellent stability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Voltage regulating ● Reference voltage ● Protection circuit
KEY PARAMETERS
PARAMETER VALUE UNIT
VZ
10 - 220
V
Test current IZT
5 - 50
mA
Ptot
1
W
TJ MAX
175
°C
Package
Sub SMA
Configuration
Single die
MECHANICAL DATA
● Case: Sub SMA ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.019g (approximately)
Sub SMA
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Forward voltage @ IF = 0.2A Power dissipation
VF
1.2
TL = 73°C
2.3
TA = 25°C(1)
Ptot
1.0
Non-repetitive peak pulse power dissipation 100μs square pulse(2)
PZSM
300
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C10P to BZD27C100P)
PRSM
150
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C110P to BZD27C220P)
PRSM
100
Junction temperature
TJ
- 55 to +175
Storage temperature
Notes: 1. Mounted on Cu-Pad size 5mm x 5mm 2. TJ = 25°C prior to surge
TSTG
- 55 to +175
UNIT V W W W
W
W °C °C
1
Version: AB2103
BZD27C10P – BZD27C220P
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
Junction-to-lead thermal resistance
RӨJL
44
Junction-to-ambient thermal resistance
RӨJA
88
Junction-to-case thermal resistance
RӨJC
48
Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)
UNIT °C/W °C/W °C/W
ORDERING INFORMATION
ORDERING CODE(1)
PACKAGE
BZD27CxP
Sub SMA
Notes: 1. “x” defines voltage from 10V(BZD27C10P) to 220V(BZD27C220P)
PACKING 10,000 / Tape & Reel
2
Version: AB2103
BZD27C10P – BZD27C220P
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
Differential Working Voltage
Resistance
Temperature Coefficient
Part number
Marking code
VZ @ IZT V
rdif @ IZ Ω
αZ @ IZ %/oC
Test Current
IZT mA
Min Nom Max Typ
Max
Min
Max
BZD27C10P
E1
9.4 10 10.6 2
4
0.05 0.09
50
BZD27C11P
E2
10.4 11 11.6 4
7
0.05 0.10
50
BZD27C12P
E3
11.4 12.05 12.7 4
7
0.05 0.10
50
BZD27C13P
E4
12.4 13.25 14.1 5
10
0.05 0.10
50
BZD27C15P
E5
13.8 14.7 15.6 5
10
0.05 0.10
25
BZD27C16P
E6
15.3 16.2 17.1 6
15
0.06 0.11
25
BZD27C18P
E7
16.8 17.95 19.1 6
15
0.06 0.11
25
BZD27C20P
E8
18.8 20 21.2 6
15
0.06 0.11
25
BZD27C22P
E9
20.8 22.05 23.3 6
15
0.06 0.11
25
BZD27C24P
F0
22.8 24.2 25.6 7
15
0.06 0.11
25
BZD27C27P
F1
25.1 27 28.9 7
15
0.06 0.11
25
BZD27C30P
F2
28 30 32
8
15
0.06 0.11
25
BZD27C33P
F3
31 33 35
8
15
0.06 0.11
25
BZD27C36P
F4
34 36 38 21
40
0.06 0.11
10
BZD27C39P
F5
37 39 41 21
40
0.06 0.11
10
BZD27C43P
F6
40 43 46 24
45
0.07 0.12
10
BZD27C47P
F7
44 47 50 24
45
0.07 0.12
10
BZD27C51P
F8
48 51 54 25
60
0.07 0.12
10
BZD27C56P
F9
52 56 60 25
60
0.07 0.12
10
BZD27C62P
G0
58 62 66 25
80
0.08 0.13
10
BZD27C68P
G1
64 68 72 25
80
0.08 0.13
10
BZD27C75P
G2
70 74.5 79 30
100
0.08 0.13
10
BZD27C82P
G3
77 82 87 60
200
0.08 0.13
10
BZD27C91P
G4
85 90.5 96 60
200
0.08 0.13
5
BZD27C100P
G5
94 100 106 60
200
0.09 0.13
5
BZD27C110P
G6
104 110 116 80
250
0.09 0.13
5
BZD27C120P
G7
114 120.5 127 150
300
0.09 0.13
5
BZD27C130P
G
124 132.5 141 150
300
0.09 0.13
5
BZD27C150P
G9
138 147 156 150
300
0.09 0.13
5
BZD27C160P
H0
153 162 171 150
350
0.09 0.13
5
BZD27C180P
H1
168 179.5 191 280
450
0.09 0.13
5
BZD27C200P
H2
188 200 212 350
750
0.09 0.13
5
BZD27C220P
H3
208 220.5 233 430
900
0.09 0.13
5
Reverse Current@
Reverse Voltage
IR
VR
μA
V
Max
7
7.5
4
8.2
3
9.1
2
10
1
11
1
12
1
13
1
15
1
16
1
18
1
20
1
22
1
24
1
27
1
30
1
33
1
36
1
39
1
43
1
47
1
51
1
56
1
62
1
68
1
75
1
82
1
91
1
100
1
110
1
120
1
130
1
150
1
160
3
Version: AB2103
BZD27C10P – BZD27C220P
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Power Dissipation
POWER DISSIPATION(W)
2.5
2.0
RthjL=44°C/W
1.5 RthjA=88°C/W
1.0
0.5
0.0 25
55
85
115
145
175
TEMPERATURE (°C)
Fig.3 Typical Forward Characteristics
1010
UF1DLW
1
Typ. VF
TJ=125°C 1 0.1
Max. VF
TJ=25°C
CAPACITANCE (pF) (A )
Fig.2 Typical Junction Capacitance
1000
C12P
100 C27P
10 0
C200P
1
2
3
REVERSE VOLTAGE (V)
INSTANTANEOUS FORWARD CURRENT (A)
0.01
0.1
Pulse width
0.0010.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
4
Ve.