10V - 220V Zener Diode
BZD27C10P – BZD27C220P
Taiwan Semiconductor
1W, 10V - 220V Zener Diode
FEATURES
● Silicon zener diodes ● Low profile s...
Description
BZD27C10P – BZD27C220P
Taiwan Semiconductor
1W, 10V - 220V Zener Diode
FEATURES
● Silicon zener diodes ● Low profile surface-mount package ● Zener and surge current specification ● Low leakage current ● Excellent stability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Voltage regulating ● Reference voltage ● Protection circuit
KEY PARAMETERS
PARAMETER VALUE UNIT
VZ
10 - 220
V
Test current IZT
5 - 50
mA
Ptot
1
W
TJ MAX
175
°C
Package
Sub SMA
Configuration
Single die
MECHANICAL DATA
● Case: Sub SMA ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.019g (approximately)
Sub SMA
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Forward voltage @ IF = 0.2A Power dissipation
VF
1.2
TL = 73°C
2.3
TA = 25°C(1)
Ptot
1.0
Non-repetitive peak pulse power dissipation 100μs square pulse(2)
PZSM
300
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C10P to BZD27C100P)
PRSM
150
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C110P to BZD27C220P)
PRSM
100
Junction temperature
TJ
- 55 to +175
Storage temperature
Notes: 1. Mounted on Cu-Pad size 5mm x 5mm 2. TJ = 25°C prior to surge
TSTG
- 55 to +175
UNIT V W W W
W
W °C °C
1
Version: AB2103
...
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