Document
SK1020D1 ... SK10100D1
SK1020D1 ... SK10100D1
Surface Mount Schottky Rectifiers – Single Diode Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode
Version 2009-07-03
2.3 0.5
7.0±0.2
6.6±0.2 5.3±0.2 4
Type Typ
123
6.0±0.2
Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse
1
1.0 2.7
2.3
1 2/4
3
Dimensions - Maße [mm]
Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
10 A
20...100 V
TO-252AA D-PAK 1.6 g
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type Typ SK1020D1
Repetitive peak reverse voltage Surge peak reverse voltage
Periodische Spitzensperrspannung Stoßspitzensperrspannung
VRRM [V]
VRSM [V]
20 20
Forward Voltage Durchlass-Spannung
VF [V] 1)
IF = 5 A IF = 10 A
< 0.51
< 0.55
SK1030D1
30
30
< 0.51
< 0.55
SK1040D1
40
40
< 0.51
< 0.55
SK1045D1
45
45
< 0.51
< 0.55
SK1050D1
50
50
< 0.62
< 0.70
SK1060D1
60
60
< 0.62
< 0.70
SK1080D1
80
80
< 0.71
< 0.83
SK10100D1
100
100
< 0.71
< 0.83
Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C
IFAV
10 A
Repetitive peak forward current Periodischer Spitzenstrom
f > 15 Hz
IFRM
30 A 2)
Peak forward surge current 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
SK1020...
TA = 25°C
SK1060D1
SK1080...
TA = 25°C
SK10100D1
IFSM IFSM
135/150 A 115/125 A
Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
80 A2s
Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur
Tj -50...+150°C TS -50...+175°C
1 Tj = 25°C 2 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
Characteristics
Leakage current Sperrstrom
SK1020D1... Tj = 25°C SK1045D1 Tj = 100°C
Leakage current Sperrstrom
SK1050D1... Tj = 25°C SK10100D1 Tj = 100°C
Thermal resistance junction to case Wärmewiderstand Sperrschicht - Gehäuse
VR = VRRM VR = VRRM
SK1020D1 ... SK10100D1
Kennwerte IR < 300 µA
< 45 mA IR < 200 µA
< 25 mA RthC < 2.5 K/W
120 [%] 100
80
60
40
20 IFAV
0 0 TC 50 100 150 [°C] Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
102 [A] SK1020D1...SK1045D1
SK1050D1, SK1060D1
10
1
10-1
SK1080D1, SK10100D1
IF 10-2
0 VF 0.4 0.6 [V] 1.0 Forward characteristics (typical values) Durchlasskennlinien (typische Werte)
2
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© Diotec Semiconductor AG
.