KTD2060

SEMICONDUCTOR TECHNICAL DATA KTD2060 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Good Linearity of hFE. Complementary to KTB1368. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 80 80 5 4 0.4 25 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5+0.1/-0.05 J 13.6 +_ 0.5 R K 3.7+_ 0.2 L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 N 2.54 +_ 0.1 P 6.8+_ 0.1 Q 4.5 +_ 0.2 R 2.6 +_0.2 HS 0.5 Typ 123 Q 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=80V, IE=0 Emitter Cut-off Current IEBO VEB=5V, IC=0 Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO IC=10mA, IB=0 DC Current Gain hFE(1) (Note) hFE(2) VCE=5V, IC=0.5A VCE=5V, IC=3A Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency VCE(sat) VBE fT IC=3A, IB=0.3A VCE=5V, IC=3A VCE=5V, IC=0.5A Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz Note : hFE(1) Classification R:40 80, O:70 140, Y:120 240 MIN. 80 5 40 15 - TYP. 50 0.45 1.0 8.0 90 MAX. 30...