NPN TRANSISTOR. KTD2061 Datasheet

KTD2061 TRANSISTOR. Datasheet pdf. Equivalent


Part KTD2061
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION DRIVER.
Manufacture KEC
Datasheet
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KTD2061
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION
TV, MONITOR VERTICAL OUTPUT APPLICATION
DRIVER STAGE APPLICATION
COROR TV CLASS B SOUND OUTPUT APPLICATION
FEATURES
High Breakdown Voltage : VCEO=180V(Min.)
High Transition Frequency : fT=100MHz(Typ.)
High Current : IC(max)=2A.
Complementary to KTB1369.
KTD2061
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
200
180
5
2
0.2
20
150
-55 150
UNIT
V
V
V
A
A
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE
Transition Frequency
fT
Note : hFE Classification O:70 140 , Y:120 240
TEST CONDITION
VCB=200V, IE=0
VEB=5V, IC=0
IC=10mA, IB=0
VCE=10V, IC=400mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=10V, IC=400mA
MIN.
-
-
180
70
-
-
-
TYP.
-
-
-
-
-
-
100
MAX.
1.0
1.0
-
240
1.0
1.0
-
UNIT
A
A
V
V
V
MHz
2015. 7. 10
Revision No : 5
1/2



KTD2061
KTD2061
2015. 7. 10
Revision No : 5
2/2







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