STF33N60M2

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features 123 I2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram , TAB Order codes STF33N60M2 STI33N60M2 STP33N60M2 STW33N60M2 VDS @ TJmax RDS(on) max ID 26 A(1) 650 V 0.125 Ω 26 A 1. Limited by maximum junction temperature. Extremely low gate charge Lower RDS(on) x area vs previous generation MDmesh™ II technology Low gate input resistance 100% avalanche tested Zener-protected Applications Switching applications LCC converters, resonant converters AM15572v1 Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Order codes STF33N60M2 STI33N60M2 STP33N60M2 STW33N60M2 Table 1. Device summary Marking Package 33N60M2 TO-220FP I2PAK TO-220 TO-247 Packaging Tube November 2013 This is information on a product in full production. DocID024298 Rev 2 1/19 www.st.com Contents Contents STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . ....