D-S MOSFET. ME2345A Datasheet

ME2345A MOSFET. Datasheet pdf. Equivalent


Part ME2345A
Description P-Channel 30V (D-S) MOSFET
Feature P-Channel 30V (D-S) MOSFET ME2345A/ME2345A-G GENERAL DESCRIPTION The ME2345A is the P-Channel logi.
Manufacture Matsuki
Datasheet
Download ME2345A Datasheet


P-Channel 30V (D-S) MOSFET ME2345A/ME2345A-G GENERAL DESCR ME2345A Datasheet
P-Channel 30V (D-S) MOSFET ME2345A/ME2345A-G GENERAL DESCR ME2345A-G Datasheet
P-Channel 30-V (D-S) MOSFET ME2345AS/ME2345AS-G GENERAL DE ME2345AS Datasheet
P-Channel 30-V (D-S) MOSFET ME2345AS/ME2345AS-G GENERAL DE ME2345AS-G Datasheet
Recommendation Recommendation Datasheet ME2345A Datasheet




ME2345A
P-Channel 30V (D-S) MOSFET
ME2345A/ME2345A-G
GENERAL DESCRIPTION
The ME2345A is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where switching and low in-line power loss are needed in a very
small outline surface mount package.
PIN CONFIGURATION
(SOT-23)
Top View
FEATURES
RDS(ON) 68m@VGS=-10V
RDS(ON) 80m@VGS=-4.5V
RDS(ON) 100m@VGS=-2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
DSC
e Ordering Information: ME2345A (Pb-free)
ME2345A-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TA=25
TA=70
TA=25
TA=70
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
Maximum Ratings
-30
±12
-3.6
-2.9
-14
1.4
0.9
-55 to 150
90
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃/W
Jun, 2012-Ver4.4
01



ME2345A
ME2345A/ME2345A-G
P-Channel 30V (D-S) MOSFET
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
V(BR)DSS
VGS(th)
IGSS
IDSS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-Resistance
VSD Diode Forward Voltage
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VDS=0V, VGS=±12V
VDS=-24V, VGS=0V
VGS=-10V, ID= -4.2A
VGS=-4.5V, ID= -4A
VGS=-2.5V, ID= -2A
IS=-1A, VGS=0V
-30 V
-0.6 -1.3 V
±100 nA
-1 μA
57 68
62 80 mΩ
80 100
-0.7 -1
V
DYNAMIC
Qg Total Gate Charge
9
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-15V, VGS=-4.5V, ID=-4A
2.3
2
nC
Ciss Input Capacitance
710
Coss
Output Capacitance
VDS=-15V, VGS=0V,f=1MHz
70
Crss Reverse Transfer Capacitance
20
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDS=-15V, RL =3.6Ω
37
23
td(off)
Turn-Off Delay Time
RGEN=6Ω, VGS=-10V
46
tf Turn-Off Fall time
3
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
pF
ns
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Jun, 2012-Ver4.4
02







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