Mode Mosfet. ME2345 Datasheet

ME2345 Mosfet. Datasheet pdf. Equivalent


Part ME2345
Description P-Channel Enhancement Mode Mosfet
Feature P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION The ME2345 is the P-Channel logic enhancement .
Manufacture Matsuki
Datasheet
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ME2345
P-Channel Enhancement Mode Mosfet
GENERAL DESCRIPTION
The ME2345 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
PIN CONFIGURATION
(SOT-23)
Top View
ME2345(-G)
FEATURES
RDS(ON) 65m@VGS=-10V
RDS(ON) 75m@VGS=-4.5V
RDS(ON) 105m@VGS=-2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
DSC
e Ordering Information: ME2345 (Pb-free)
ME2345-G (Green product-Halogen free) (Green
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(Tj=150)*
Pulsed Drain Current
Maximum Power Dissipation*
Operating Junction Temperature
TA=25
TA=70
TA=25
TA=70
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
Limit
-30
±12
-3.65
-2.9
-15
1.4
0.9
-55 to 150
T≦10 sec
90
Steady State
120
Unit
V
V
A
A
W
℃/W
e * The device mounted on 1in2 FR4 board with 2 oz copper, the current rating is based on t≦10 sec Rja rating.
Apr, 2008-Ver1.0
01



ME2345
P-Channel Enhancement Mode Mosfet
Electrical Characteristics (TA =25Unless Otherwise Specified)
ME2345(-G)
Symbol
STATIC
V(BR)DSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-Resistance a
VSD Diode Forward Voltage
Limit
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VDS=0V, VGS=±12V
VDS=-24V, VGS=0V
VGS=-10V, ID= -4.2A
VGS=-4.5V, ID= -4A
VGS=-2.5V, ID= -2A
IS=-1A, VGS=0V
Min Typ
-30
-0.7
53
59
74
-0.7
DYNAMIC
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Rg Gate-Resistance
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall time
VDS=-15V, VGS=-4.5V, ID=-4A
VDS=0V, VGS=0V, F=1MHz
VDS=-15V, VGS=0V,
f=1MHz
VDS=-15V, RL =3.6Ω
RGEN=6Ω, VGS=-10V
9.5
3
2
5.5
800
70
20
37
23
46
3
e Notes: a. Pulse test; pulse width 300us, duty cycle2%
Max Unit
-1.3
±100
-1
65
75
105
-1
V
V
nA
μA
mΩ
V
nC
Ω
pF
ns
Apr, 2008-Ver1.0
02







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