1SS184

1SS184 SILICON EPITAXIAL PLANAR DIODE Features Small package Low forward voltage Fast reverse recovery time Small total capacitance Applications Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 30 V at VR = 80 V Total Capacitance at VR = 0 , f = 1 MHz Reverse Recovery Time at IF = 10 mA 3 12 Marking Code: A4 SOT-23 Plastic Package Symbol VRM VR IO IFM IFSM Ptot Tj Ts Value 85 80 100 300 2 150 150 - 55 to + 150 Unit V V mA mA A mW OC OC Symbol VF IR CT trr Max. 1.2 0.1 0.5 3 4 Unit V µA pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008 1SS184 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008 ...