1SS193

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS193 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL Reverse Breakdown Voltage (IR=100µA) V(BR) Reverse voltage leakage current (VR=80V) IR Forward voltage (IF=100mA) VF Diode capacitance (VR=0V,f=1MHz) CD Reverse recovery time trr SOT-23 0.055(1.40) 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) 1 0.019(2.00) 0.071(1.80) 0.118(3.00) 3 0.110(2.80) 2 Dimensions in inches and (millimeters) MIN. 80 - TYP. - MAX. 0.5 1.2 3 4 UNITS V µA V pF ns 2006-3 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its informatio...