SWITCHING DIODE
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 SWITCHING DIODE
1SS196
FEATURES
* Power dissipation PD: 150 mW(Ta...
Description
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 SWITCHING DIODE
1SS196
FEATURES
* Power dissipation PD: 150 mW(Tamb=25OC)
* Forward current IF: 100 mA
* Reverse voltage VR: 80 V
* Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Reverse Breakdown Voltage (IR=100µA)
V(BR)
Reverse voltage leakage current (VR=80V)
IR
Forward voltage (IF=100mA)
VF
Diode capacitance (VR=0V,f=1MHz)
CD
Reverse recovery time
trr
SOT-23
0.055(1.40) 0.047(1.20)
0.006(0.15) 0.003(0.08)
0.020(0.50) 0.012(0.30)
0.043(1.10) 0.035(0.90)
0.004(0.10) 0.000(0.00)
0.020(0.50) 0.012(0.30)
0.100(2.55) 0.089(2.25)
1 0.019(2.00) 0.071(1.80)
0.118(3.00) 3 0.110(2.80)
2
Dimensions in inches and (millimeters)
MIN. 80 -
TYP. -
MAX. 0.5 1.2 4 4
UNITS V µA V pF ns
2006-3
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its informatio...
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