B5819W

1. 05 B5819W SCHOTTKY BARRIER DIODE FEATURES Power dissipation PD: 450 mW (Tamb=25℃) Collector current IF: 1 A Collector-base voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOD-123 Unit: mm 1. 6 2. 70 3. 70 0. 55 MARKING: SL ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Symbol V(BR) IR VF CD Test conditions IR= 1mA VR=40V VR=4V VR=6V IF=0.1A IF=1A IF=3A VR=4V, f=1MHz MIN MAX UNIT 40 V 1 0.05 0.075 0.45 0.6 0.9 mA V 120 pF ...